Structural model for theSi(100)4×3−Insurface phase

Abstract

A model of the atomic arrangement of the Si͑100͒4ϫ3-In surface phase is proposed on the basis of the known data and the appearance of the Si͑100͒4ϫ3-In surface found in the present STM study at low bias voltages. The model incorporates a 4ϫ1-reconstructed Si͑100͒ substrate having every second top Si atom double row missing. Indium atoms of the overlayer occupy the sites where each In atom is bonded to one Si atom of top Si dimer and to two Si atoms in the lower bulklike Si͑100͒ substrate layer. Three Si dimers and six In atoms form a unit cluster of the Si͑100͒4ϫ3-In surface reconstruction. The model successfully accounts for all available experimental data. ͓S0163-1829͑98͒01820-7͔

Scanning tunneling microscopy and ab initio studies of precursor states of Ga-induced cluster on Si(001) surface

“…Nanosize clusters have been reported as the predominant reconstructed structure of adsorption group III element (Al, In, and Ga) atoms on Si(0 0 1) [1][2][3][4][5][6][7][8][9]. The formation of these clusters is attributed to the anisotropic strain between the substrate and the adsorption atoms, and they have many fascinating characteristics, i.e., quasi-three-dimensional growth, self-assembled growth, nanosized well-ordered arrangement.…”

“…The first type of Ga-induced structure is the well-known 2 Â n-Ga (n = 2, 3,5,7,9) structures formed in a wide range of substrate temperature at a Ga coverage below 0.50 ML (1.00 ML = 6.78 Â 10 14 atoms/cm 2 ) [6,7,[10][11][12][13][14][15]. These structures are composed of the Ga dimers formed parallel to the Si dimers.…”

Magic nanoclusters of group III metals on Si(100) surface

“…Recently, two models of its atomic arrangement have been treated as the most plausible candidates. The first model was proposed by Zotov et al [15] and was modified later by Saranin et al [14]. The model was based mainly on the STM observations and took into account the preservation of the 4×1 reconstruction on the Si(100) substrate after removal of In atoms upon H exposure [16,17].…”

In nanolines and nanoclusters on self-assembled Bi-lines

“…A pioneer structural model for In/Si(0 0 1)-(4 · 3) was proposed by Bunk et al [13], formed by a ''pyramidal''-like structure with seven In adatoms per (4 · 3) surface unit cell. Meanwhile, Zotov et al [14], based on scanning tunneling microscopy images, proposed another structural model, with six In adatoms on the (4 · 3) unit cell. A year latter, the Zotov model was contested by Bunk et al [15].…”