Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure

Abstract

<p>Properties of a double-period InAs/GaSb superlattice grown by solid-source molecular beam epitaxy are presented. Precise growth conditions at the InAs/GaSb heterojunction yielded abrupt heterointerfaces and superior material quality as verified...</p>

Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures

“…Reflection high energy electron diffraction unit attached to MBE growth system was used to monitor the oxide desorption and the entire growth process. The shutter sequences and an ultra-thin InSb layer at the InAs-on-GaSb heterointerface via Sb 2 soaking prior to InAs growth as well as 6 s short duration of Sb 2 flux soaking prior to GaSb growth, 21,45 were selected for all the GaSb/InAs/GaSb heterostructure growth such that the entire layer structure could be strain balanced. The resulting structures were characterized using cross-sectional TEM, PL spectroscopy, and finally microwave reflection PCD analysis for structural, optical, and carrier recombination properties, respectively.…”

“…[15][16][17][18] This implies that it is necessary to investigate the InAs/GaSb material systems with both long and short periods, embedded into the same material system by analyzing their structural, optical, and carrier recombination dynamics. Recently, we have reported the band dispersion analysis 21 using an in-house 8 Â 8 kÁp framework, where we predict the existence of À96 meV bandgap within the long-period SL substructure and the formation of +18 meV bandgap within the short-period SL substructure. Furthermore, the photoluminescence (PL) properties of these structures are of interest to investigate the excitonic transitions and their correlation with the carrier recombination lifetime.…”

“…The growth parameters such as, the growth temperature, the growth rate (i.e., controlled by group-III atoms), V/III ratios (i.e., As 2 /In, Sb 2 /Ga), and appropriate shutter sequences (i.e., As, Ga, Sb, In shutter close/open) during MBE growth, for example, are all considered as proposed solutions for achieving abrupt interfaces in the InAs/GaSb system. 21,36,[42][43][44][45] In this work, we present the carrier recombination dynamics and optical properties of a (i) single layer (single interface), (ii) a double period heterostructure (4 interfaces), (iii) a double period SL consisting of a short-period SL of 10 InAs/GaSb repeats, embedded into a long-period SL of 4 InAs/GaSb repeats (28 interfaces), and (iv) same as (iii) but different growth parameters, grown by Veeco Gen II solidsource MBE. We correlate the interface and defect properties via cross-sectional transmission electron microscopy (TEM), temperature and power dependent optical properties by employing PL spectroscopy, and carrier recombination dynamics using microwave photoconductivity decay (m-PCD) analysis.…”

Влияние Межслойного Взаимодействия На Электронный Спектр Вертикальной Сверхрешетки

“…В качестве образующих 2DSL-монослоев в настоящей работе, помимо графена, рассмотрены графеноподобные соединения (GLC) типа А 3 В 5 [11,12]. Основанием для этого является потенциальная возможность успешного использования решетки GLC в наноэлектронике по аналогии с применением 3D-соединений А 3 В 5 в микроэлектронике [13][14][15][16][17][18][19][20]. Обсуждаются также SL с ферромагнитными металлическими слоями, представляющие интерес для спинтроники.…”

Особенности роста слоев в напряженных сверхрешетках InAs/GaSb

“…Основным методом изготовления сверхрешеток InAs/GaSb в настоящее время является метод молекулярно-пучковой эпитаксии (МПЭ) [3][4][5]. Как следует из литературных данных [6], минимальная толщина интерфейсных (т. е. переходных) слоев InAs/GaSb для метода МПЭ составляет около 1 монослоя (0.3 nm). Однако для массового производства приборов более предпочтительной технологией получения является газофазная эпитаксия из металлоорганических соединений (ГФЭМОС) по причине более низкой себестоимости.…”