Structural, morphological and Raman studies of pulse electrosynthesised indium antimonide thin films

A theoretical model of high Curie temperature for N-type ferromagnetic diluted semiconductors based on iron-doped indium antimonide

“…Fe-doped InSb ferromagnetism originates from p-type carriers and shows electron-induced ferromagnetism, which is an n-type diluted semiconductor, making it easy to be used in real spin devices [37][38][39][40]. The n-type InSb (In, Fe) Sb ferromagnetic diluted magnetic semiconductor shows significance for next-generation nanoelectronic device [41] applications such as spintronics [42], biosensors to detect bacteria [43], Hall sensors [44], photonics [45], optoelectronics [46], infrared emitters [46,47], gas sensors [48], magneto resistors [49][50], and speed-sensitive sensors [51]. To use and apply the devices mentioned previously, it is necessary to understand the ferromagnetism properties of Fe-doped InSb.…”

“…Fe doped on InSb obtained an n-type diluted magnetic semiconductor; its curie temperature is higher than or less than the room temperature, with or without an applied external magnetic field; in [13], [19], and [37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52], the Curie temperatures of InFeSb are 131 K-385 K, when x = 5%-16% and 20%-35%.…”