Structural, morphological, optical and magnetic properties of RF sputtered Co doped ZnO diluted magnetic semiconductor for spintronic applications

Siddheswaran, R.; Medlín, Rostislav; Jeyanthi, C. Esther; Raj, S. Gokul; Mangalaraja, Ramalinga Viswanathan

doi:10.1007/s00339-019-2886-0

Cited by 12 publications

(1 citation statement)

References 52 publications

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“…Among these, thin films form an important and useful structure for various applications such as gas sensors, optoelectronic devices, transparent electrodes for solar cells, and as a catalyst [6][7][8][9]. It is also being considered as a potential candidate in the new frontiers of research such as spintronics [10]. Diluted magnetic semiconductors (DMSs), generally obtained by substituting a small amount of transition metal (TM) in oxide semiconductors, are expected to show ferromagnetism at room temperature due to the interaction between the spins of the carriers and the localised moments of TM impurities [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Structural, Magnetic, and Optical Properties of Mn2+ Doping in ZnO Thin Films

et al. 2021

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MnxZn1−xO thin films (x = 0%, 1%, 3%, and 5%) were grown on corning glass substrates using sol–gel technique. Single-phase hexagonal wurtzite structure was confirmed using X-ray diffraction. Raman analysis revealed the presence of Mn content with an additional vibrational mode at 570 cm−1. The surface morphology of the samples was observed by scanning electron microscopy which suggested that the grain size increases with an increase in Mn concentration. The optical bandgap increases with increasing Mn concentration due to a significant blueshift in UV–visible absorption spectra. The alteration of the bandgap was verified by the I–V measurements on ZnO and Mn-ZnO films. The various functional groups in the thin films were recorded using FTIR analysis. Magnetic measurements showed that MnxZn1−xO films are ferromagnetic, as Mn induces a fully polarised state. The effect of Mn2+ ions doping on MnxZn1−xO thin films was investigated by extracting various parameters such as lattice parameters, energy bandgap, resistivity, and magnetisation. The observed coercivity is about one-fifth of the earlier published work data which indicates the structure is soft in nature, having less dielectric/magnetic loss, and hence can be used as ultra-fast switching in spintronic devices.

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