Structural, optical, and electric properties of BNT–BT0.08 thin films processed by sol–gel technique

Impedance Spectroscopy of (Bi1/2Na1/2)TiO3–BaTiO3 Ceramics Modified with (K0.5Na0.5)NbO3

“…The magnitude of E a is close to the reported values from similar analysis on insulating BNT and BNT‐based materials where an activation energy between 1.3 and 1.7 eV is obtained . The magnitude of E a in our samples is approximately half the band gap (3.25–3.4 eV) of BNT–BT materials and our low‐frequency IS data show no obvious evidence of ionic conduction. This suggests the materials exhibit electronic conduction that is closely linked to intrinsic band‐type conduction at elevated temperatures.…”

Impedance Spectroscopy of (Bi1/2Na1/2)TiO3–BaTiO3 Based High‐Temperature Dielectrics

“…The activation energy, E a , of the bulk response is ~1.68 eV, which is close to the value reported for insulating BNT (1.66 eV) and BNT‐based systems (1.30~1.70 eV) . This value of E a is almost half of the band gap (3.25~3.4 eV) of BNT‐based materials . As there is no evidence of ionic conduction in the low‐frequency IS data, it suggests the conduction mechanism is consistent with intrinsic electronic conduction (i.e., the Fermi level is close to the midgap energy).…”

“…22,28 This value of E a is almost half of the band gap (3.25~3.4 eV) of BNT-based materials. 29,30 As there is no evidence of ionic conduction in the low-frequency IS data, it suggests the conduction mechanism is consistent with intrinsic electronic conduction (i.e., the Fermi level is close to the midgap energy). The same analysis gives E a~1 .70 eV for KNN-20CZ.…”

Electrical properties and relaxation behavior of Bi0.5Na0.5TiO3-BaTiO3 ceramics modified with NaNbO3

“…2), a major ionic contribution is not likely. It is reported that the band gap of BNT-BT materials was around 3.2-3.4 eV [42][43][44]. There could be electronic states near the Fermi-level.…”