Structural, optical and electrical characteristics of nickel oxide thin films synthesised through chemical processing method

Abstract

A simple and cheap chemical deposition method was used to produce a nickel oxide (NiO) thin film on glass substrates from a solution that contained Ni 2+ and monoethanolamine. Thermal treatment of the film at temperatures above 350 ℃ for 1 h caused decomposition of the nickel hydroxide into nickel oxide. Structural, optical and electrical properties of the film were studied using X-ray diffraction (XRD), spectrophotometry, current-voltage measurements and scanning electron microscopy (SEM). The film was found to be polycrystalline with interplanar spacing of 0.241 nm, 0.208 nm and 0.148 nm for (111), (200) and (220) planes respectively, the lattice constant was found to be 0.417 nm. The film had a porous surface morphology, formed from a network of nanowalls of average thickness of 66.67 nm and 52.00 nm for as-deposited and annealed films respectively. Transmittance of visible light by the as-deposited film was higher and the absorption edge of the film blueshifted after annealing. The optical band gap of the annealed film was 3.8 eV. Electrical resistivity of the film was Ωcm.

Recent advances in non‐precious Ni‐based promising catalysts for water splitting application

“…Hence, TMOs are the best candidates for OER process because of their low cost, earth abundance, high stability, richness in inactive sites, and easy preparation methods 65 . Among the metal‐based OER catalysts, Ni‐based oxides of higher water oxidation potential have demonstrated better OER activity as compared with other state‐of‐the‐art catalysts 28,68‐73 . Nickel can be synthesized in a 3‐D porous structure by some synthesis methods in different morphologies to enhance electrochemical properties 69,74 .…”

“…65 Among the metal-based OER catalysts, Ni-based oxides of higher water oxidation potential have demonstrated better OER activity as compared with other state-of-the-art catalysts. 28,[68][69][70][71][72][73] Nickel can be synthesized in a 3-D porous structure by some synthesis methods in different morphologies to enhance electrochemical properties. 69,74 The porous structure can be helpful for penetrating electrolyte ions more easily into deep interior.…”

“…Additionally, decent stability of 12 h was documented, verifying the importance of the ALD method to enhancing the electrochemical activity. Next, a solvothermal method was used to synthesize NiO nanoparticles of 2.5 to 5 nm in diameters with 0.29 s −1 TOF and 300 mV overpotential for OER activity 72 . Further, Gao et al solvothermally prepared the flower‐like catalyst of α ‐Ni(OH) 2 for the OER performance where the 331 mV overpotential at 10 mA/cm 2 with lowest Tafel slope of 42 mV/dec was obtained 73 …”

Surface characterization of NiO thin films deposited by RF‐magnetron sputtering at different thickness: Statistical and multifractal approach

“…Nickel oxide (NiO) is one of the metal oxides that have been used from the past to the present, which is one of the materials used in the manufacture of electronic components such as transistors due to its high sensitivity, high electron transfer speed, low cost (Barir et al, 2017; Majd et al, 2017; Majd et al, 2018). Nickel oxide is a p‐type semiconductor with a NaCl‐like structure that has a bandgap in the range of 3.6‑4 eV (Akinkuade et al, 2018). As research on nickel oxide can be referred to the research conducted by Samira Mansouri Majd et al in (2017) and (2018), which used nickel oxide deposited by RF‐sputtering method to build a biosensor to detect the AIDS virus and NADH based on the field‐effect transistors (Majd et al, 2017; Majd et al, 2018).…”

Ni/n-GaAs ve NiO/n-GaAs Diyotların Elektriksel Parametreleri Arasındaki İlişki

“…Bilindiği gibi ince filmler sol-jel, püskürtme yöntemi (spray pyrolysis), döndürerek kaplama (spin coating), rf-dc magnetron püskürtme, kimyasal banyo biriktirme, kimyasal işleme, e-ışın buharlaştırma, termal buharlaştırma, PA-MOCVD, daldırmalı kaplama, atomik tabaka biriktirme gibi farklı tekniklerle üretilebilmektedir. NiO ince filmli cihazların üretiminde de birçok teknik kullanılmıştır [15][16][17][18][19][20][21]. Bu çalışmada da p-NiO/n-GaAs p-n heteroeklem diyotları ve Ni/n-GaAs Schottky diyotları termal buharlaştırma yöntemi kullanılarak üretilmiştir [22][23].…”