Structural, optical and electrical characterization of Ga-Mg co-doped ZnO transparent conductive films

Kang, H.; Lu, Zhou; Zhong, Zhang; Gu, J.H.

doi:10.1016/j.matlet.2017.12.072

Cited by 34 publications

(4 citation statements)

References 20 publications

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“…The reaction between the electrons (e − ) and atmospheric oxygen (O 2 ) occurs, generating superoxide radicals (O 2 − •), the reaction between the electrons holes (h + ), and H 2 O generating hydroxyl (OH) [9]. The following equations represent all interactions that occur during the photocatalytic degradation [9,10]:…”

Section: Introductionmentioning

confidence: 99%

Kinetics and Mechanism of Acid Orange AO7 Photodegradation Using Ag-Doped ZnO Nanoparticles

Alsaad,

Al-Hmoud,

Rababah

et al. 2024

Preprint

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The photocatalyst degradation process of the azobenzene derivatives is complicated process due to the existence of many interaction combinations. Among these are intermolecular interactions including London dispersion forces (LDF), dipole interactions, and hydrogen bonding. In addition to investigating the mechanism of the photoisomerization process, UV-Vis spectroscopy, FTIR spectroscopy, pH and conductivity measurements were used to investigate and clarify the photocatalytic mechanism and degradation pathway of AO7 using Ag doped ZnO NPs upon long-wavelength UV-irradiation. The kinetic rate constant is divided into two components. The first-rate and second-rate constants are obtained to be 0.014 min-1 and 0.022 min-1, respectively. The average rate constant of the AO7 degradation is a superposition of the rate constants of all frequency bands. This confirms that photocatalyst degradation process of the azobenzene derivatives is sophisticated process.

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Section: Introductionmentioning

confidence: 99%

Kinetics and Mechanism of Acid Orange AO7 Photodegradation Using Ag-Doped ZnO Nanoparticles

Alsaad,

Al-Hmoud,

Rababah

et al. 2024

Preprint

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“…Tin-doped indium oxide (ITO) has high optical transmittance, high work function, and electrical conductivity [1]. These superior properties make the ITO nanostructures the most widely used transparent conductive oxide (TCO) in photovoltaic cells [2,3], lightemitting diodes (LEDs) [4], thin film transistors (TFTs) [5,6], and liquid crystal displays [7,8], etc. Recently, the demand of TCOs materials for optoelectronic applications has been increasing and a stable supply of ITO is insufficient to fulfil the need of this age because indium (In) is a very expensive and rare element; this deposition of ITO nanostructures is therefore very expensive and takes place at high temperatures [9].…”

Section: Introductionmentioning

confidence: 99%

“…It opens the way for researchers to find cost-effective and abundant materials for the applications of TCOs. The n-type semiconductor zinc oxide (ZnO) was actively investigated and it has pivotal technological and fundamental importance due to high optical transmittance, low electrical resistance, abundance in the earth, high radiation resistance, and low toxicity [5]. Its optoelectronic properties can be tuned by doping of various metals.…”

Section: Introductionmentioning

confidence: 99%

Tailoring the Structural, Optical and Electrical Properties of Zinc Oxide Nanostructures by Zirconium Doping

Khan

Ramzan²,

Imran³

et al. 2022

Coatings

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Owing to its low resistivity, high transmittance, and tunable optical band gap, ZnO is of great interest for optoelectronic applications. Herein, the sol–gel technique was used to synthesize un-doped and zirconium-doped zinc oxide (ZZO) nanostructures with different concentrations of Zirconium (Zr). X-ray diffraction (XRD), scanning electron microscope (SEM), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), UV-Vis spectroscopy, and photoluminescence (PL) measurements were used to investigate the influence of Zr doping on the structural, optical, and electrical properties of developed nanostructures. XRD and SEM confirmed the increase in crystallite size with increasing concentrations of Zr. Raman analysis indicated the presence of oxygen vacancies in synthesized nanostructures. UV-Vis spectroscopy illustrated the blue shift of band gap and red shift of the absorption edge for ZZO nanostructures with increasing concentrations of Zr. For the measurement of electrical properties, the spin-coating technique was used to deposit un-doped and Zr-doped ZnO layers of ~165 nm thickness. The four-probe-point (4PP) method illustrated that the doping of Zr caused a reduction in electrical resistance. Hall Effect measurements showed a high value, 3.78 × 1020 cm−3, of the carrier concentration and a low value, 10.2 cm2/Vs, of the carrier mobility for the Zr-doped layer. The high optical transmittance of ~80%, wide band gap of 3.51 eV, low electrical resistivity of 1.35 × 10−3 Ω·cm, and maximum carrier concentration of 3.78 × 1020 cm−3 make ZZO nanostructures one of the most promising candidates for the application of transparent conductive oxide (TCO) in optoelectronic devices.

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“…1. Introduction: Transparent conductive film with the advantages of low electrical resistivity, high transmittance in the visible light range and high reflectivity in the infrared range has a broad application prospect in the photovoltaic industry such as lightemitting diodes, flat panel displays, thin film transistors and solar cells [1,2]. The most widely used transparent conductive films are transparent conductive oxide (TCO) thin films [3][4][5][6][7], mainly including tin oxide (SnO 2 ), indium oxide, indium SnO 2 (ITO), zinc oxide (ZnO) and the doped system with above oxides.…”

mentioning

confidence: 99%

Electrical and optical properties of metal‐sandwiched ZnO/Ti/Cu/Ti/ZnO transparent conductive thin film

Lin

Zhao

Jiang

et al. 2018

Micro & Nano Letters

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Metal-sandwiched zinc oxide (ZnO)/titanium (Ti)/copper (Cu)/Ti/ZnO thin film systems were fabricated using magnetron sputtering technology and then annealed using a rapid thermal annealing system at temperatures from 100 to 400°C. The influence of the Ti film thicknesses and annealing temperatures on the surface morphologies, sheet resistance and optical properties were studied. The surface morphologies change a little with the annealing temperature rises. The sheet resistances reduce with the Ti film thickness or annealing temperature increasing. Both the max transmittance and figure of merit reduce with the increase of Ti film thickness. The max transmittance increases with the temperature increasing from 100 to 300°C and then reduces. However, the figure of merit increases with the temperature increasing which indicates that the metal-sandwiched ZnO/Ti/Cu/Ti/ZnO thin film system annealed at 400°C has the optimal performance.

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Structural, optical and electrical characterization of Ga-Mg co-doped ZnO transparent conductive films

Cited by 34 publications

References 20 publications

Kinetics and Mechanism of Acid Orange AO7 Photodegradation Using Ag-Doped ZnO Nanoparticles

Kinetics and Mechanism of Acid Orange AO7 Photodegradation Using Ag-Doped ZnO Nanoparticles

Tailoring the Structural, Optical and Electrical Properties of Zinc Oxide Nanostructures by Zirconium Doping

Electrical and optical properties of metal‐sandwiched ZnO/Ti/Cu/Ti/ZnO transparent conductive thin film

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