Structural, optical and electrical characterization of gadolinium and indium doped cadmium oxide/p-silicon heterojunctions for solar cell applications

Abstract

The Al/n-CdO:Gd:In/p-Si/Ag heterojunction diode showed excellent photoelectrical properties and was suitable for solar cell applications.

Highly transparent conducting cerium incorporated CdO thin films deposited by a spray pyrolytic technique

“…The binding energy corresponding to the peaks Cd 3d 5/2 , Cd 3d 3/2 , Cd 3p 3/2 , Cd 3p 1/2 , Ce 3d 5/2 and O1s as obtained from XPS analysis are 406 eV (405.07 eV), 413 eV (411 eV), 618 eV (617.06 eV), 652 eV (650.57 eV), 878-882 eV (882.70 eV), and 530 (532 eV) eV respectively. These values are in good agreement with the reported values given in parenthesis 25,26. The narrow scan spectrum of Cd, O and Ce elements are shown in Fig.2b-d.…”

“…2b) indicates the Cd 2+ states; this is in good agreement with the literature. 25 The binding energy corresponding to the peak O1s obtained from XPS analysis is 530 eV which conrms the presence of O 2À oxidation state in the deposited lm (Fig. 2c).…”

Morphological evolution of cadmium oxide crystals showing color changes and facet-dependent conductivity behavior

“…The electron affinity of CdO has been reported to be 4.51 eV. 44 Within the thin surface layer of CdO, the {100} face should have a larger upward band bending than that of the {111} face to reflect its lower conductivity behavior. A larger band bending means a greater energy barrier for electrons to pass through this surface.…”

Incorporation of Ti3+ metal ions in chemically spray deposited CdO thin films for optoelectronic and chem-resistive based formaldehyde gas sensor applications

“…The energy splitting between these two peaks is 6.9 eV, which confirms the oxidation state of Cd 2+ . 26 The O 1s spectra of the CdO thin films exhibit one peak with a binding energy of 533.9 eV, as shown in Fig. 4c.…”