Structural, optical and electrical characterization of Hg<sub>x</sub>Cd<sub>1‐x</sub>Te polycrystalline films fabricated by two‐source evaporation technique

Basharat, M.; Hannan, Mohammed A.; Shah, Nazar Abbas; Ali, Abid; Arif, Muhammad; Maqsood, Asghari

doi:10.1002/crat.200710911

Cited by 5 publications

(4 citation statements)

References 26 publications

(23 reference statements)

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“…[1][2][3] The employment of this semiconductor as solar cell material has been limited basically by economical factors. An important reduction in the cost of solar cells can be achieved by preparing doped polycrystalline thin films of appropriate quality.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of Cd-enriched CdTe thin films by close spaced sublimation

et al. 2008

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Cd-enriched cadmium telluride (CdTe) polycrystalline films were grown on corning glass substrates by close spaced sublimation (CSS) technique. To our knowledge, Cd-enriched CdTe thin films by CSS have not been reported earlier. The structural investigations performed by means of X-ray diffraction (XRD) technique, scanning electron microscope (SEM), and energy dispersive X-ray spectroscopy (EDX) showed that the deposited films exhibit a polycrystalline structure with AE111ae as preferred orientation. The structural, optical, and electrical properties of these films were analyzed as a function of the Cd concentration. For the films having an excess of Cd, the electrical resistivity dropped several orders of magnitude. The deposited films also showed that the value of resistivity decreased with increasing temperature manifesting the semiconducting behavior of the films. The results showed that using this deposition technique, ntype Cd-enriched CdTe polycrystalline film could be produced.

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Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of Cd-enriched CdTe thin films by close spaced sublimation

et al. 2008

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“…[1] Semiconductors also apply this strategy to produce Al x Ga 1Àx As, In x Ga 1Àx N, and Hg x Cd 1Àx Te for bandgap-tunable electronic and photonic devices. [2][3][4] Recently, tremendous efforts have been devoted to preparing 2D transition metal dichalcogenide (TMD) alloys, which adopt atomic thickness, diverse electronic structures, and show great potential in nanoelectronics, flexible devices, and energyharvesting applications. [5][6][7][8][9][10][11][12][13][14] Janus TMD monolayer alloys having different chalcogen atoms situating at the top and bottom atomic planes separately break the out-of-plane mirror symmetry, thus generating vertical dipoles and enabling spin manipulation.…”

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confidence: 99%

Structural Evolution of Atomically Thin 1T’‐MoTe₂ Alloyed in Chalcogen Atmosphere

et al. 2022

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Alloying is widely applied to tailor properties of 2D materials. Herein, a space‐confined chemical vapor deposition (CVD) strategy to homogeneously grow 100 μm‐sized monolayer 1T’‐MoTe2 in batches is developed. Aberration‐corrected annular dark‐field scanning transmission electron microscopy combined with density functional theory calculations is applied to investigate the atomic structural alteration of 1T’‐MoTe2 alloyed with sulfur. 1T’‐to‐2H phase transition is observed, triggered by both thermodynamic (stability improvement) and kinetic (phase transition barrier reduction) reasons. The alloying degrees of MoS2xTe2(1−x) grown at different temperatures display homophilic and random configurations, respectively, providing a feasible approach to tailor the atomic mixture of the alloying elements. The intralayer reconstruction and the interlayer displacement take place as defect concentration increases at elevated alloying temperatures. In contrast, 1T’‐MoTe2 displays high susceptibility in the presence of oxygen. An encapsulation method is developed using CVD‐grown monolayer MoS2, extending the lifetime of monolayer tellurides from several minutes to at least 24 h. These results gain fundamental insights into the structural change in both the beneficial (sulfurization) and detrimental (oxidation) alloying processes of atomically thin 1T’‐MoTe2 and provide a new degree of freedom for the controllable growth of 2D alloys (i.e., tailoring the alloying degree).

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“…Among the ChGs, CdTe is an IIVI semiconductor that is suitable for the fabrication of solar cells [8][9][10]. CdTe is a promising material for superior room-temperature gamma rays and x-ray detectors because of its wide optical band gap and high atomic mass [11,12].…”

Section: Introductionmentioning

confidence: 99%

Physical characteristics, band-gap and glass-transition temperature estimations of (CdTe)_100−x(SbSe)_x glasses

Kebaïli¹,

Znaidia²,

Boukhris³

et al. 2021

Phys. Scr.

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Given the importance of (CdTe) and (SbSe) properties, one can presume exceptional applications of (CdTe) 100−x (SbSe) x compounds. Therefore, diverse physicochemical characteristics were investigated. The overall number of coordination (CN), number of constraints (N c ), heat of atomization (H a ), cohesive energy (CE), and lone-pair electrons (LPE) of (CdTe) 100−x (SbSe) x chalcogenide glasses were studied using the known chemical bond approach. CN and N c diminished when the amount of SbSe was increased, whereas CE increased due to the decrease in Cd-Cd homo-polar bonds. The band gap (E g ) was assessed and found to diminish with SbSe expansion. A good agreement was found between the E g assessments and previous experimental studies. The conduction and valence band positions were also determined. The glass-transition temperature (T g ) was assessed and found to diminish with SbSe expansion.

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Structural, optical and electrical characterization of Hg_xCd_1‐xTe polycrystalline films fabricated by two‐source evaporation technique

Cited by 5 publications

References 26 publications

Fabrication and characterization of Cd-enriched CdTe thin films by close spaced sublimation

Fabrication and characterization of Cd-enriched CdTe thin films by close spaced sublimation

Structural Evolution of Atomically Thin 1T’‐MoTe₂ Alloyed in Chalcogen Atmosphere

Physical characteristics, band-gap and glass-transition temperature estimations of (CdTe)_100−x(SbSe)_x glasses

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Structural, optical and electrical characterization of HgxCd1‐xTe polycrystalline films fabricated by two‐source evaporation technique

Cited by 5 publications

References 26 publications

Fabrication and characterization of Cd-enriched CdTe thin films by close spaced sublimation

Fabrication and characterization of Cd-enriched CdTe thin films by close spaced sublimation

Structural Evolution of Atomically Thin 1T’‐MoTe2 Alloyed in Chalcogen Atmosphere

Physical characteristics, band-gap and glass-transition temperature estimations of (CdTe)100−x(SbSe)x glasses

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About

Structural, optical and electrical characterization of Hg_xCd_1‐xTe polycrystalline films fabricated by two‐source evaporation technique

Structural Evolution of Atomically Thin 1T’‐MoTe₂ Alloyed in Chalcogen Atmosphere

Physical characteristics, band-gap and glass-transition temperature estimations of (CdTe)_100−x(SbSe)_x glasses