Structural, optical, and electrical characterizations of Cr-doped CuO thin films

Abstract

The polycrystalline copper oxide (CuO) thin films have been produced using method of spin coating onto the soda lime glass (SLG) as well as substrate of p-type Si (1 0 0) wafers at 500 ºC in furnace. The obtained undoped and Cr doped thin films of CuO have been comprehensively characterized via X-ray diffraction (XRD), ultraviolet-vis (UV-vis) spectroscopy, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics for providing information on quality of the crystalline nature, change in energy band gap and electrical properties, respectively. Structural analysis results which obtained from XRD data demonstrate that CuO films conjunction with Cr doping indicated that all thin films have monoclinic polycrystalline nature, with two main peaks ( 002) and ( 111) with dhkl about 2.52 and 2.32 Å, respectively. The transmittance and energy band gap value of undoped and Cr doped thin films of CuO ranging in varying concentration ratio have been determined in the wavelength region of 300 to 1100 nm. UV-vis spectrum analysis results indicate that both transmittance value and energy band gap of the CuO films is changed with increasing Cr doping ratio in CuO solution at room temperature. The I-V and C-V characteristic of Cr:CuO/p-Si diodes were associated with the CuO/p-Si diodes. It is seen that doping of Cr had a significant change onv the obtained devices' performance. Thus, the Cr:CuO/p-Si diodes generated by 1% Cr doping using spin coating method had the highest light sensitivity compared with those of the other diodes.

Structural, Morphological, Optical Properties and Modelling of Ag Doped CuO/ZnO/AZO Solar Cell

“…! o = 18.52 " 3.08E g (7) The dielectric coefficients of thin films were found using the refractive indices calculated by Moss and Herve and Vandemme relations and are given in Table 2.…”

“…In recent years, copper oxides have been widely used in gas sensors [1], thin film transistors [2], photo-electrochemical cells [3,4], and cross-point memories [5], including electronic and optoelectronic devices due to their energy band gap values differing from 1.5 to 3eV. CuO-based thin films have very prominent advantages due to their relatively high optical absorption properties, non-toxicity, low production costs, and thermal stabilities [6,7].…”

Cationic and oxygen defect modulation for tailoring the bandgap and room temperature ferromagnetism of CuO via multiple d-block cations

“…For example, band gap values were modified and found to increase as the doping concentration of Cr increased in CuO. 12 In addition, Cr can induce RTFM in CuO. 13 Further, it was observed that Co-doped CuO nanoparticles show superparamagnetism at room temperature.…”

Spectroscopic ellipsometry modelling of Cr+ implanted copper oxide thin films

“…In other works, the researchers used Na 14 , Co 15 , Ag, Au, Cr, Pd, Pt, Sb, Si 16 , and Ni 17 as dopants to modify the properties of copper oxides. Furthermore, Cr has been proved to enhance the sensing performance of copper oxides 18 and increase the V OC and I SC of a CuO:Cr/p-Si p–n junction, which is favourable in solar cell applications 19 .…”