Structural, optical and electrical properties of ZnO films grown on c-plane sapphire and (100)γ-LiAlO2 by pulse laser deposition

Influence of thickness and growth temperature on the optical and electrical properties of ZnO thin films

“…4b presents the variation of the conductivity of a ZnO film with thickness of 100 nm, the response being similar for other thicknesses. As can be seen, for films deposited in the range of temperature between 150 and 650°C, the conductivity presents a monotonic decreasing, a behaviour consistent with that reported by other groups [15,24]. The decrease of the conductivity can be attributed to the improved stoichiometry of the ZnO films with increasing temperature [14], since this improvement can induce a decrease in the concentration of the intrinsic defects.…”

Microstructure and optical properties of nanocrystalline ZnO and ZnO:(Li or Al) thin films

“…ZnO thin films have been prepared by various techniques such as rf sputtering [4,5], spray pyrolysis [6,7], chemical vapor deposition (CVD) [8][9][10], pulsed laser deposition [11][12][13], molecular beam epitaxy [14] and sol-gel processing [3,[15][16][17]. When sol-gel is used, there are two principal routes used to obtain oxide thin films: the alkoxide route using organometallic precursors and the none-alkoxide route using water or alcohol solutions of metal salts [18].…”

A-plane GaN layer grown on (302) (-LiAlO2 by MOCVD

“…No distinct yellow peaks at ∼2.23 eV is observed in Fig. 6, which means that a little amount of Li was decomposed from LAO substrate and incorporated into a-GaN layer fabricated at high temperature by our MOCVD method because of the low temperature buffer layer [28][29][30][31]. Our result is quite challenging to grow highquality a-GaN layer on (3 0 2) LAO substrate by MOCVD method for device application.…”