Structural, optical, and electrical properties of indium-doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

Abstract

TitleStructural, optical, and electrical properties of indium doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition cm 2 /Vs, and transmittance over 80% (including the glass substrate) from 500-1500 nm. The optical bandgap of the films was found to be in the range of 2.7 to 3.2 eV using both the Tauc relation and the derivative of transmittance. The observed widening of the optical bandgap with increasing carrier concentration can be described well only by considering bandgap renormalization effects along with the Burstein-Moss shift for a nonparabolic conduction band.

A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

“…Therefore, even as negative ions can be present, they are of no concern when it comes to depositing crystalline oxide films: Tay et al [245] did not mention negative ions at all in their review on cathodic-arc-deposited oxide films. The absence of the negative ion issue is also illustrated by the deposition of transparent conducting oxide films using filtered cathodic arc deposition, which show excellent transmittance, high carrier mobility, and low resistivity [246][247][248][249][250][251].…”

Dopant-induced band filling and bandgap renormalization in CdO : In films

“…Bandgap renormalization results from the electron-electron and electron-ionized impurity interactions. According to the random perturbation theory by Berggren and Sernelius (BS model) [11], the down-shift of the conduction band due to the electron-electron interaction is (SI units): It should be mentioned that another useful expression called the Jain model could also be utilized to estimate the bandgap renormalization in CdO films [25]. In fact, the Jain model, which has been demonstrated to be valid for AZO, ITO and other IV, III-V, and II-VI semiconductors [26][27][28], has a similar physical meaning as the BS model but it is less rigorous due to its simplified derivation.…”

Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE

“…Further improvements in high performance of GaN-based devices call hence for an accurate and systematic understanding of basic physical modification undergone by the material due to doping. In heavily doped semiconductor, one of the most important material parameter, namely the fundamental band gap, is frequently affected by high electron concentration as a result of a two competing effects [4][5][6][7][8][9][10][11][12]. First, the well-known Burstein-Moss (BM) band-filling effect, which shifts the absorption onset to higher energies with increasing carrier concentration [4][5][6][7][8][9][10][11][12][13][14].…”

“…In heavily doped semiconductor, one of the most important material parameter, namely the fundamental band gap, is frequently affected by high electron concentration as a result of a two competing effects [4][5][6][7][8][9][10][11][12]. First, the well-known Burstein-Moss (BM) band-filling effect, which shifts the absorption onset to higher energies with increasing carrier concentration [4][5][6][7][8][9][10][11][12][13][14]. The second phenomenon, called band gap renormalization (BGR), decreases the fundamental band gap energy with increasing carrier density due to many-body interactions [4][5][6][7][8][9][10][11][12]15].…”

“…First, the well-known Burstein-Moss (BM) band-filling effect, which shifts the absorption onset to higher energies with increasing carrier concentration [4][5][6][7][8][9][10][11][12][13][14]. The second phenomenon, called band gap renormalization (BGR), decreases the fundamental band gap energy with increasing carrier density due to many-body interactions [4][5][6][7][8][9][10][11][12]15]. Many papers were dedicated to the competing effects between BM band filling and BGR in III-V [12,16] and II-VI [8][9][10][11] semiconductors, using several theoretical models.…”