Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis

Calixto-Rodríguez, M.; Martı́nez, H.; Sánchez-Juárez, A.; Campos-Álvarez, J.; Tiburcio‐Silver, A.; Calixto, M. E.

doi:10.1016/j.tsf.2008.11.026

Cited by 110 publications

(50 citation statements)

References 14 publications

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“…It is clear that the control of the stoichiometry that we have achieved in the syntheses allows for tuning of optical band gaps. The band gaps of SnS films previously reported [44][45][46][47][48] show similar change with sulfur deficiency (Fig. 4b).…”

Section: Resultssupporting

confidence: 77%

A facile method for the production of SnS thin films from melt reactions

et al. 2016

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Tin(II)O-ethylxanthate [Sn(S 2 COEt) 2 ] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111)-orientated, orthorhombic SnS films with controllable elemental stoichiometries (of between Sn 1.3 S and SnS) were reliably produced by selecting heating temperatures between 200 and 400°C. The direct optical band gaps of the SnS films ranged from 1.26 to 1.88 eV and were strongly influenced by its Sn/S ratio. The precursor [Sn(S 2 COEt) 2 ] was characterized by thermogravimetric analysis and attenuated total reflection Fourier-transform infrared spectroscopy. The as-prepared SnS films were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, powder X-ray diffractometry, Raman spectroscopy, and UV-Vis spectroscopy.

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Section: Resultssupporting

confidence: 77%

A facile method for the production of SnS thin films from melt reactions

et al. 2016

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“…[2,5,14,15] A second technique is physical vapor deposition from a SnS target such as thermal evaporation, [16][17][18] RF sputtering, [19] and electron beam evaporation. [20] The last method uses transport by chemical vapors such as chemical spray pyrolysis, [21][22][23] chemical vapor deposition (CVD), [6,[24][25][26][27] and atomic layer deposition (ALD). [28] Due to various oxidation states of tin (0, +2, and +4), traces of other phases (i.e.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Tin Monosulfide Thin Films

Sinsermsuksakul

Heo

Noh

et al. 2011

Advanced Energy Materials

412

355

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“…Other methods such as thermal evaporation [15], chemical vapour transport (CVT) [16], atomic layer deposition (ALD) [17,18], spray pyrolysis [19,20], dip deposition [21], and pyrolysis [22] have also been reported.…”

Section: Introductionmentioning

confidence: 99%

Thin films of tin(II) sulphide (SnS) by aerosol-assisted chemical vapour deposition (AACVD) using tin(II) dithiocarbamates as single-source precursors

Kevin

Lewis

Raftery

et al. 2015

Journal of Crystal Growth

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Thin Films of SnS by aerosol-assisted chemical vapour deposition (AACVD) using tin(II) dithiocarbamates as single-source precursors, Journal of Crystal Growth, http://dx. AbstractThe synthesis of the asymmetric dithiocarbamates of tin(II) with the formula [Sn(S 2 CNRR') 2 ] (where R = Et, R' = n-Bu (1); R = Me, R' = n-Bu (2); R = R' = Et (3)) and their use for the deposition of SnS thin films by aerosol-assisted chemical vapour deposition (AACVD) is described. The effects of temperature and the concentration of the precursors on deposition were investigated. The stoichiometry of SnS was best at higher concentrations of precursors (250 mM) and at 450 ºC. The direct electronic band gap of the SnS produced by this method was estimated from optical absorbance measurements as 1.2 eV. The composition of films was confirmed by powder X-ray diffraction (p-XRD) and energy dispersive analysis of X-rays (EDAX) spectroscopy. 2

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Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis

Cited by 110 publications

References 14 publications

A facile method for the production of SnS thin films from melt reactions

A facile method for the production of SnS thin films from melt reactions

Atomic Layer Deposition of Tin Monosulfide Thin Films

Thin films of tin(II) sulphide (SnS) by aerosol-assisted chemical vapour deposition (AACVD) using tin(II) dithiocarbamates as single-source precursors

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