Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique

Zinc oxide nanoparticles (ZnO NPs) are a promising platform for their use in biomedical research, especially given their anticancer and antimicrobial activities. This work presents the synthesis of ZnO NPs doped with different amounts of rare-earth ions of ytterbium (Yb) and cerium (Ce) and the assessment of their anticancer and antimicrobial activities. The structural investigations indicated a hexagonal wurtzite structure for all prepared NPs. The particle size was reduced by raising the amount of Ce and Yb in ZnO. The anticancer capabilities of the samples were examined by the cell viability MTT assay. Post 48-h treatment showed a reduction in the cancer cell viability, which was x = 0.00 (68%), x = 0.01 (58.70%), x = 0.03 (80.94%) and x = 0.05 (64.91%), respectively. We found that samples doped with x = 0.01 and x = 0.05 of Yb and Ce showed a better inhibitory effect on HCT-116 cancer cells than unadded ZnO (x = 0.00). The IC50 for HCT-116 cells of Ce and Yb co-doped ZnO nanoparticles was calculated and the IC50 values were x = 0.01 (3.50 µg/mL), x = 0.05 (8.25 µg/mL), x = 0.00 (11.75 µg/mL), and x = 0.03 (21.50 µg/mL). The treatment-doped ZnO NPs caused apoptotic cell death in the HCT-116 cells. The nanoparticles showed inhibitory action on both C. albicans and E. coli. It can be concluded that doping ZnO NPs with Yb and Ce improves their apoptotic effects on cancer and microbial cells.

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“…Similar results were previously observed by M.A.M. Ahmed et al [ 61 ]. The crystallite size decreased as the content of Yb and Ce increased.…”

Section: Discussionsupporting

confidence: 93%

In Vitro Antimicrobial and Anticancer Peculiarities of Ytterbium and Cerium Co-Doped Zinc Oxide Nanoparticles

Hannachi

Khan

Slimani

et al. 2022

Biology

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“…Region II represents the intermediate forward voltage around 0.1 < V < 1. The current observed in this region grew exponentially with voltage according to equation I ~exp V , suggesting that recombination tunneling may be the underlying transport mechanism [ 10 ]. This mechanism is typically seen in wide band gap semiconductors.…”

Section: Resultsmentioning

confidence: 99%

“…The alteration of the structural, optical, and electrical characteristics of ZnO with a suitable dopant may be a practical and efficient method for enhancing device performance. In recent years, rare-earth elements (REEs), including Gd [ 5 , 6 ], Eu [ 7 ], Tb [ 8 ], Ce [ 9 ], Sm [ 10 ], Dy [ 11 ], and Nd [ 12 ], have been reported as dopants of ZnO, in order to create new types of diluted magnetic semiconductors (DMSs). This is because they can significantly improve the conductivity, luminosity, and magnetic properties, with the long lifetime of excited state and multiple valence electrons.…”

Section: Introductionmentioning

confidence: 99%

Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method

et al. 2023

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Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of different Al doping concentrations. The X-ray diffraction profiles indicated that the films had a nanocrystalline structure of ZnO with a (0 0 2) preferential orientation. An increase in the Al doping concentration deteriorated the (0 0 2) diffraction peak intensity. The transmittance measurements in the UV–Vis wavelength range indicated that the film’s optical gap increased with increase in Al doping concentration. The heterojunction parameters were evaluated using the current–voltage (I-V) characterization carried out of the fabricated n-ZnO/p-Si heterostructure, in dark conditions at room temperature. From these measurements, the n-ZnO-based DMS/p-Si heterojunction diode with the use of (Gd, Al) co-doped ZnO film showed the lowest leakage current of 1.28 × 10−8 A and an ideality factor n of 1.11, close to the ideal diode behavior of η = 1, compared to the n-Gd-doped ZnO/p-Si and n-undoped ZnO/p-Si heterojunction diodes.

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“…It was observed that, after Sn doping, the drastic decrement in n value was noted as mentioned in Table 4. The obtained values of ideality factor (n) for all the devices are significantly above the unity (n = 1 for ideal diode) which could be attributed to voltage drop across metal/semiconductor interface and also the possible series resistance of the active layer [26]. We have observed a decrease in the ideality factor (n) for the Cu/TZO junction, which could be attributed to improved carrier concertation following Sn doping.…”

Section: Electrical Studiesmentioning

confidence: 70%

Self-powered visible transparent $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}\mathrm{O}$$ Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

2023

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Visible transparent $$\mathrm{Cu}/\mathrm{n}-\mathrm{ZnO}$$ Cu / n - ZnO and $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}O\left(x=0.14\right) \mathrm{TZO},$$ Cu / Zn 1 - x Sn x O x = 0.14 TZO , Schottky junctions were successfully fabricated on ITO-coated glass substrates via direct current magnetron reactive sputtering method. The structural, morphological, optical, and electrical properties were thoroughly investigated. The polycrystalline nature of the samples was confirmed by XRD studies. FESEM images validate the changes in surface morphology after doping and annealing, and AFM analysis confirmed the variation in surface roughness. The electrical analysis reveals the presence of a Schottky barrier in the fabricated devices. In dark condition, three-order rectification ratio was observed. A two-order increase in leakage current was also observed after illuminating 365 nm UV light of power 60 µW/cm2. The figures of merits of sensors, such as responsivity, detectivity, response speed, and linear dynamic range, were thoroughly investigated. The fabricated sensor had a responsivity of about 07.80 mA/W and a detectivity of 1.39 × 1011 Jones. At zero bias, the sensor also demonstrated a transient photocurrent response of approximately 783 ms for rise and 876 ms for fall. Similarly, 33.70 dB of linear dynamic range was observed. These findings suggests that Cu/TZO Schottky diodes could be useful for self-powered, visible transparent UV photosensors in next-generation optoelectronic devices.

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Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique

Cited by 32 publications

References 57 publications

In Vitro Antimicrobial and Anticancer Peculiarities of Ytterbium and Cerium Co-Doped Zinc Oxide Nanoparticles

In Vitro Antimicrobial and Anticancer Peculiarities of Ytterbium and Cerium Co-Doped Zinc Oxide Nanoparticles

Effect of Al Concentration on Structural, Optical and Electrical Properties of (Gd, Al) Co-Doped ZnO and Its n-ZnO/p-Si (1 0 0) Heterojunction Structures Prepared via Co-Sputtering Method

Self-powered visible transparent $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}\mathrm{O}$$ Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

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