Structural, optical and electrical properties of TiO2 thin films synthesized by sol–gel technique

Hanini, Faouzi; Bouabellou, A.; Bouachiba, Yassine; Kermiche, Fouad; Taabouche, Adel; Hemissi, M.; Lakhdari, and D.

doi:10.9790/3021-031112128

Cited by 18 publications

(2 citation statements)

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“…Figure b offers a comparative analysis of crystallite size and resistivity with reference to various TiO 2 thin-film literature data. − Our findings reveal a clear trend where the resistivity of TiO 2 decreases as the grain size increases.…”

Section: Resultsmentioning

confidence: 76%

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O₃-Annealing Effect on the Etching Resilience of a TiO₂/Al₂O₃ filter Prepared by Atomic Layer Deposition

Vazquez,

López,

Bohórquez

et al. 2023

ACS Appl. Mater. Interfaces

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This research investigates the improvements of ozone (O 3 ) annealing on the optical and etching characteristics of TiO 2 /Al 2 O 3 multilayer band-pass filters designed for potential optoelectronic applications. The band-pass filters were fabricated using atomic layer deposition (ALD), and their performance was systematically analyzed after the addition of O 3 annealing at moderate temperatures (up to 300 °C). Results reveal that O 3 annealing improves the optical transmittance of the multilayers by approximately 40% without significant spectral changes (∼6 nm). The observed enhancement in the transmittance is attributed to the improved stoichiometry of TiO 2 . By filling in the oxygen vacancies created during the fabrication process, it reduces its extinction coefficient. Furthermore, the O 3 annealing enhances the stability of TiO 2 against wet etching, improving the uniformity of etched surfaces. Etching on the ozoneannealed multilayer was up to 8 times more homogeneous, as observed in the roughness. The relatively short duration of the O 3 annealing process, approximately 1.6 h, makes it a cost-effective alternative compared to using ozone in the ALD process, which can last several hours for thick optical coatings.

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Section: Resultsmentioning

confidence: 76%

“…(a) I – V curves of the TiO 2 /A l2 O 3 multilayers showing the effect of the O 3 annealing and a schematic of the four-probe measurements. (b) Comparison of crystallite size and resistivity for different TiO 2 thin-film literature data. − …”

Section: Resultsmentioning

confidence: 99%

O₃-Annealing Effect on the Etching Resilience of a TiO₂/Al₂O₃ filter Prepared by Atomic Layer Deposition

Vazquez,

López,

Bohórquez

et al. 2023

ACS Appl. Mater. Interfaces

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Synthesis and Estimation of Some Optical Properties of Fe2O3 Doped Bi2O3 Thin Film Fabricated by Eccentric Sol-Gel Route

Sahoo

Dwibedy

Panigrahi

2021

Springer Proceedings in Physics

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Optical characterization of BMO thin film prepared by an unconventional sol-gel method

Sahoo

Panigrahi

2022

J Sol-Gel Sci Technol

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Structural, optical and electrical properties of TiO2 thin films synthesized by sol–gel technique

Cited by 18 publications

References 2 publications

O₃-Annealing Effect on the Etching Resilience of a TiO₂/Al₂O₃ filter Prepared by Atomic Layer Deposition

O₃-Annealing Effect on the Etching Resilience of a TiO₂/Al₂O₃ filter Prepared by Atomic Layer Deposition

Synthesis and Estimation of Some Optical Properties of Fe2O3 Doped Bi2O3 Thin Film Fabricated by Eccentric Sol-Gel Route

Optical characterization of BMO thin film prepared by an unconventional sol-gel method

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Structural, optical and electrical properties of TiO2 thin films synthesized by sol–gel technique

Cited by 18 publications

References 2 publications

O3-Annealing Effect on the Etching Resilience of a TiO2/Al2O3 filter Prepared by Atomic Layer Deposition

O3-Annealing Effect on the Etching Resilience of a TiO2/Al2O3 filter Prepared by Atomic Layer Deposition

Synthesis and Estimation of Some Optical Properties of Fe2O3 Doped Bi2O3 Thin Film Fabricated by Eccentric Sol-Gel Route

Optical characterization of BMO thin film prepared by an unconventional sol-gel method

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Product

Resources

About

O₃-Annealing Effect on the Etching Resilience of a TiO₂/Al₂O₃ filter Prepared by Atomic Layer Deposition

O₃-Annealing Effect on the Etching Resilience of a TiO₂/Al₂O₃ filter Prepared by Atomic Layer Deposition