Structural, optical and electrical properties of Cu2Zn1−xCdxSnS4 quinternary alloys nanostructures deposited on porous silicon

Ibraheam, A. S.; Al‐Douri, Y.; Al-fhdawi, Jassim Mohammed Salih; AL-Jumaili, Hamid S.; Verma, K.D.; Hashim, U.; Ayub, R. M.; Ruslinda, A. Rahim; Arshad, M. K. Md; Reshak, A.H.; Hamid, Sharifah Bee Abd

doi:10.1007/s00542-015-2647-8

Cited by 20 publications

(3 citation statements)

References 28 publications

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“…Several investigators combined these magnetic materials with others and many characterizations such as magnetic, dielectric and microwave absorption properties have been done [14][15][16][17]. Different methods were used to prepare nanoparticles including co-precipitation technique, glass-crystallization, aerosol pyrolysis, ceramic process, gel self-combustion method and sol-gel method [18][19][20][21][22][23][24]. O) (Loba chemistry) were used as starting materials.…”

Section: Introductionmentioning

confidence: 99%

Investigation of energy band-gap of the composite of hexaferrites and polyaniline

et al. 2020

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The Bi-Al doped M-type hexaferrite (BaFe 11.8 Bi 0.1 Al 0.1 O 19) was prepared by the use of sol gel auto combustion process. The prepared sample was sintered at 1000 °C for 5 h. Polyaniline was synthesized by oxidative polymerization. Mechanical blending was used to synthesize BaFe 11.8 Bi 0.1 Al 0.1 O 19-PANI composite. X-ray diffraction (XRD), Fourier Transform Infra-red spectroscopy (FTIR), Field Emission Scanning Electron Microscope, Energy Dispersive X-ray spectroscopy and UV-vis-NIR spectroscopy were used for structural and optical analysis. XRD spectra show pure single phase of M-type hexagonal ferrites. The presence of bands in FTIR spectra in the range of 400-600 cm −1 and 800-1600 cm −1 indicate possible formation of hexaferrite and PANI. The band gaps were found nearly 2.24, 2.36 and 2.21 eV for HP1, HP2 and HP3 respectively.

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Section: Introductionmentioning

confidence: 99%

Investigation of energy band-gap of the composite of hexaferrites and polyaniline

et al. 2020

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“…Porous materials have been subjected to extensive research due to their outstanding characteristics, such as diverse morphologies, high surface area, tunable pore size and special optical properties, which have attracted considerable attention in multidisciplinary fields, including sensing, energy, biomedicine, adsorption and catalysis [1][2][3][4][5][6][7][8]. A variety of methods have been used to synthesise porous materials, for instance, electrochemical etching, hydrothermal treatment, template method and so on [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of porous silica materials with tunable morphologies and nanopore sizes using heterogemini surfactants

et al. 2018

Micro & Nano Letters

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A series of heterogemini surfactants C 16 H 33 OCH 2 CH(OH)CH 2 N + (CH 3) 2 C n H 2n+1 •Brwere used as the template to synthesise porous silica materials via a Stöber method. The influence of the alkyl chain length of heterogemini surfactants on the morphology of porous silica materials was studied. Porous silica materials were characterised by scanning electron microscopy, transmission electron microscopy and nitrogen adsorption-desorption analysis. Results showed that with the increase of alkyl chain length, the morphologies of porous silica materials gradually transform from sphere to sphere with cavity, sphere composed of vesicles, coral like and finally to lamella. Pore size of materials ranges from 1.17 to 3.93 nm. When the alkyl chain is short enough (n = 8 and 10), a hierarchical pore size distribution can be obtained. The possible formation mechanism of the porous silica materials has been discussed.

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“…12 The etching rate varied due to the different absorption bandgap energies of photo-electrochemistry. 13 This study discovered that when the energy of irradiant laser light is strong, the etching reaction is difficult. Shaping the nano-scale layer of porous silicon is very difficult.…”

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confidence: 99%

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

Immanuel

Chiang

Lee³

et al. 2021

ECS J. Solid State Sci. Technol.

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The effect of using high-power He-Cd laser irradiation for electrochemical etching on p-type silicon in hydrofluoric (HF) acid solution was investigated. Laser irradiation on the silicon surface combined with electrochemical etching process successfully controlled the formation of porous silicon (PS) in nano-scale structure. On the surface of the laser-irradiated silicon surface, the formation of nano porous silicon (NPS) during electrochemical etching was controlled by the laser wavelength and power. Then, the NPS was analysed along with physicochemical properties using analytical techniques. The luminous flux of the laser power was controlled with the help of the integrating sphere system. We designated this as the bandgap energy absorption (BEA) of electro-thermal reaction. The fabrication of NPS with laser-irradiation/electrochemical etching technology was feasible by controlling laser power (20 mW) up to a high luminescence flux value of 223 lm. NPS was used in the piratical application of microelectronic device.

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Structural, optical and electrical properties of Cu2Zn1−xCdxSnS4 quinternary alloys nanostructures deposited on porous silicon

Cited by 20 publications

References 28 publications

Investigation of energy band-gap of the composite of hexaferrites and polyaniline

Investigation of energy band-gap of the composite of hexaferrites and polyaniline

Synthesis of porous silica materials with tunable morphologies and nanopore sizes using heterogemini surfactants

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

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