Structural, optical and electrical properties of Mn-doped ZnFe2O4 synthesized using sol–gel method

Abstract

Samples with doping of Mn (0, 2, and 4%) in ZnFe2O4 were prepared by sol-gel chemical route at 80 o C. X-ray powder diffraction and Raman spectrum analysis were used to determine the preliminary phase of obtained samples. W-H and SSP plots were used to determine the crystallite size and micro-strain of samples. Using zeta potential and scanning electron microscope, the surface charge and morphology of the prepared samples were studied. The optical bandgap of sample suggested that it was semiconducting.The dielectric characteristics of samples were examined as a function of temperature at various frequencies (1 KHz, 10 KHz, 100 KHz, and 1 MHz) (60-600 o C). Dielectric study revealed the presence of interfacial and orientational polarization, with dielectric constants and dissipation factors ranging from (0.7-460) to (0.3-0.8), remain thermally stability up to 300 o C. In samples ZF-0, ZF-2, and ZF-4, the thermal dependence of DC conductivity demonstrates Arrhenius transport with one, two, and three regions of conduction, respectively. The sources of charge carrier in samples were ⋅⋅ , ′ and dipole defects ( ⋅⋅ − 2 2+ 3+ ′ ) and (2 3+ 2+ . − 2 2+ 3+ ′ ). The current work could help identify possible applications in semiconductor devices, thermally stable capacitors, and as mixed ionic electronic conductors in solid oxide fuel cells.

Manganese doped two-dimensional zinc ferrite thin films as chemiresistive trimethylamine gas sensors

“…52,53 In the present study, the decrease in the bandgap may be explained by the decrease in the lattice constant decreasing with an increase in Mn concentration. 45 A similar result was observed by Manikandan et al, where the bandgap of co-doped ZF nanoparticles decreased with an increase in the lattice constant. 51 Another reason is an increase in dopant concentration in the ZnFe 2 O 4 host matrix has been seen to cause a red-shift in the band gap energy, which may be caused by oxygen vacancies and defects that create defect states between the valence and conduction bands.…”

“…is lower than that of the host Zn (65 a.u.). 45 The lattice constant of Mn-doped thin films is higher than that of the ZFM0 thin film, resulting in a shift of the Raman band to a lower wavenumber side.…”

Enhancement in the Electrocatalytic and Optoelectronic Performance of Cost-Effective Counter Electrode VO2 for Dye-Sensitized Solar Cell (DSSC)

“…The peak at 526 cm −1 (Ag symmetry) indicates the presence of a triply coordinated oxygen V─O stretching bond, which is brought about by the three pyramid systems' well-known edge-sharing oxygen atoms [24]. The double coordinated V─O stretching bond with a shared oxygen atom in the corner, which is common in the two-pyramid system, is what causes the peak at 703 cm −1 (B 2g , B 3g symmetry) [33]. The high-frequency peak at 996 cm −1 is caused by the terminal unshared oxygen V═O bond's in-phase stretching vibration.…”

Enhancement of Dielectric Response and Optical Bandgap Tuning with Improving Surface Morphology of Recyclable Polyvinyl Alcohol–CeO2 Polymer Nanocomposites

“…To calculate the overall nanocrystalline size (D), the following Scherrer equation can be utilized. [37][38][39][40]…”

“…To calculate the overall nanocrystalline size ( D ), the following Scherrer equation can be utilized. [ 37–40 ] where the full width at half maximum (FWHM) of the peak is β and the X‐ray wavelength and Bragg diffraction angle are λ and θ , respectively.…”