Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys

Cesare, G. de; Galluzzi, F.; Guattari, G.; Leo, Giuseppe; Vincenzoni, R.; Bemporad, Edoardo

doi:10.1016/0925-9635(93)90221-m

Cited by 28 publications

(7 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…17 Diluting the plasma with H 2 was shown to further reduce the carbon incorporation in the film by further lowering the sticking coefficient of the precursors, making the divergence between the gas stoichiometry and film stoichiometry larger. A stronger deviation in stoichiometry was also reported in earlier papers when increasing the deposition temperature, though no strong influence was seen in more recent work for temperatures between 130 C and 300 C. 22,29 Since we did not perform SIMS analysis on all samples, R CH 4 (gas flow ratios) are reported instead of actual carbon content in the film throughout this paper. Fig.…”

Section: A Carbon Content and Optical Propertiessupporting

confidence: 55%

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

Boccard

Holman

2015

Journal of Applied Physics

View full text Add to dashboard Cite

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300 C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer. V

show abstract

Section: A Carbon Content and Optical Propertiessupporting

confidence: 55%

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

Boccard

Holman

2015

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…We find: The fitting of experimental data allows to extract the value of the parameter tn'rn+gtpCp in the first diode: 2.6* 10-11 cm 2 V-1 . This rather low value should not surprise, since we are dealing with a-SiC:H [7]. Under red light illumination, both II and 12 are given by eq.…”

Section: --mentioning

confidence: 95%

“…First, a thin (50 A) a-SiC:H p-doped window layer with large band-gap was deposited to maximize light trasmittance. Then, an a-SiC:H intrinsic (i) layer followed, with band-gap larger than 2eV [7]. The thickness of this i-layer (600 A) is a trade-off between sensitivity and selectivity, since the need for a large absorption of the blue light calls for thick layers, while transparency to red photons requires thinner films.…”

Section: Introductionmentioning

confidence: 99%

a-Si:H/a-SiC:H Heterostructure for Bias-Controlled Photodetectors

et al. 1994

Self Cite

View full text Add to dashboard Cite

We present a novel family of photodetectors based on hydrogenated amorphous Si/SiC p-in-i-p heterostructures. Front p-i-n and rear n-i-p diodes work one as a detector and the other as a load impedance, depending on the polarity of the applied voltage. Due to different absorption at different wavelengths, the devices operate as bias-controlled light detectors in either the blue or the red regions. The energy gap and the thickness of the two intrinsic layers have been optimized to obtain a sharp wavelength selection (centered at 430 and 630 nm) with high rejection-ratios and good quantum efficiencies. The I-V characteristics and the device time response are investigated and simulated by SPICE.

show abstract

“…These results could explain the wide spread of optical and compositional data in the literature of high electronic quality a-SiC:H films grown by PECVD at low power levels in similar deposition conditions. 32,33 In fact, information such as effective dissipated power in the plasma and molecule dwell time are usually not reported and it is difficult to perform a correct comparison of growth conditions used and properties of deposited samples among different laboratories.…”

Section: A Plasma Chemistry and Optical Propertiesmentioning

confidence: 99%

Characterization of the effect of growth conditions on a-SiC:H films

Rava¹,

Crovini

Demichelis

et al. 1996

Journal of Applied Physics

View full text Add to dashboard Cite

The effects of dissipated power and gas dwell time in SiH4+CH4 plasmas on the properties of a-SiC:H films deposited by plasma-enhanced chemical-vapor deposition have been investigated for different methane fractions in plasmas operating in the low-power regime. Optical, structural, and electrical characterizations have been performed in order to investigate the influence of dissipated power and molecule dwell time on the physical properties of a-SiC:H films. It was found that both the investigated deposition parameters can have a remarkable influence on carbon incorporation and on optical properties such as the energy gap. In particular an increase in the dissipated power or in the molecule dwell time leads to an increase in carbon incorporation and in energy gap. The electrical properties and defect density are still those of device quality films grown in standard deposition conditions and are not influenced by variations in dissipated power or gas dwell time. From these results some conclusions regarding the growth mechanisms are drawn.

show abstract

Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys

Cited by 28 publications

References 13 publications

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

a-Si:H/a-SiC:H Heterostructure for Bias-Controlled Photodetectors

Characterization of the effect of growth conditions on a-SiC:H films

Contact Info

Product

Resources

About