Structural, optical, and electronic properties of hydrogenated polymorphous silicon films deposited from silane–hydrogen and silane–helium mixtures

Abstract

Articles you may be interested inEffect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition Evolution of structure in thin microcrystalline silicon films grown by electron-cyclotron resonance chemical vapor deposition

Light-induced defect creation in hydrogenated polymorphous silicon

“…Such rapid motion of hydrogen atoms may be brought from ordering of the amorphous network being enhanced by repeating the LS-annealing cycles. This is also suggested from the increase of the hole diffusion length after the LS-annealing cycles by Saadane et al [23].…”

Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon

“…This last technique gave pure a-Si, whereas hydrogenated a-Si (a-Si:H) was obtained with the other two techniques. In the case of PECVD, in addition to conventional a-Si:H, some films were obtained in plasma conditions such that nanocrystals as well as SiH x radicals were deposited on the substrate, resulting in a special grade of amorphous silicon known as polymorphous silicon (pm-Si:H) [24]. All films were several microns thick, so heterogeneous nucleation at the film surfaces can be neglected except for one sample that consisted of a 0.5 µm thin a-Si:H film deposited on a highly crystalline 'microcrystalline film' (µc-Si:H) of the same thickness.…”

Helium versus hydrogen dilution in the optimization of polymorphous silicon solar cells

“…Polymorphous silicon films deposited from silanehelium mixtures have a diffusion length of 185 nm for the holes and a ls product of 7.9 · 10 À6 cm 2 V À1 for the electrons [12]. These properties suggest that we should achieve high efficiency pin solar cells using helium dilution for the i-layer.…”