2020
DOI: 10.1007/s10854-020-03898-3
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Structural, optical, and electronic properties of non-stoichiometric nano-ZnS1−x: Mnx

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Cited by 17 publications
(8 citation statements)
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“…The extra Fig. 5 The electronic band structure of CdS and Mg-doped CdS (stoichiometric and non-stoichiometric) peak appeared in the low energy range for Mg-doped CdS 1−δ is due to the presence of Mg ions and vacancies together in CdS matrix, an analogous result was got in Mn-doped nonstoichiometric ZnS (Heiba et al 2020b). Also the extra peak appeared in the visible range for Mg-doped CdS 1−δ is due to the dramatic changes in the DOS of the sample as revealed in Fig.…”
Section: Electronic Analysismentioning
confidence: 78%
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“…The extra Fig. 5 The electronic band structure of CdS and Mg-doped CdS (stoichiometric and non-stoichiometric) peak appeared in the low energy range for Mg-doped CdS 1−δ is due to the presence of Mg ions and vacancies together in CdS matrix, an analogous result was got in Mn-doped nonstoichiometric ZnS (Heiba et al 2020b). Also the extra peak appeared in the visible range for Mg-doped CdS 1−δ is due to the dramatic changes in the DOS of the sample as revealed in Fig.…”
Section: Electronic Analysismentioning
confidence: 78%
“…Figure 5 also shows that the Mg-doped CdS samples in all mentioned cases have direct band gap structure. Furthermore, all samples have a semiconductor nature except Mg-doped Cd 1−δ S, it has a metallic nature (Heiba et al 2020b). The obtained theoretical energy gaps are 1.457, 1.913 and 1.051 eV for Mg-doped CdS, CdS 1−δ and CdS 1−δ O δ samples, respectively.…”
Section: Electronic Analysismentioning
confidence: 99%
“…Nano semiconductor materials exhibited different properties as compared with their bulk counterpart; therefore, they are applied in many optoelectronic applications [1][2][3][4][5]. Zinc and cadmium sulfides (ZnS and CdS) materials belong to II-VI groups which possess unique characteristics that may apply in many fields [4,5]. ZnS and CdS displayed good adaptability to alter its structural, electronic, magnetic, electric, and optical features [4,5].…”
Section: Introductionmentioning
confidence: 99%
“…This light absorption edge can be redshifted upon doping the material with a suitable dopant element [3]. For example, as the semiconductor materials doped with transition metals such as Ni, Co, Mn, Fe…, the formed materials exhibited more exotic characteristics because of spin-spin exchange interactions [4][5][6][7][8]. For instants, doping ZnCdSe/ZnS core/shell quantum dots with Fe, the emission intensity was improved [9].…”
Section: Introductionmentioning
confidence: 99%