Structural, optical and electronic properties of La-doped ZnO thin films: Experimental study and DFT calculations

Soussi, A.; Hssi, A. Ait; Boulkaddat, L.; Asbayou, Abdellah; Labchir, Nabil; Elfanaoui, A.; Markazi, R.; Bouabid, K.; Ihlal, A.; Taleb, A.

doi:10.1016/j.physb.2022.414181

Cited by 21 publications

(11 citation statements)

References 44 publications

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“…The successful integration of these materials, thanks to precise film preparation methods, has resulted in significant advances in the fields of PV and optoelectronics. This valuable development reflects the benefits of these techniques over conventional methods and underscores the crucial role these materials play in shaping the future of renewable energies and advanced electronic technologies [18] Copper gallium sulfide telluride (CuGa(S,Te) 2 ), a semiconductor material with a tetragonal crystal structure similar to CuInS 2 , has gained significance in this field. It exhibits p-type conductivity and possesses a direct bandgap of 2.4 eV, creating IB among chalcopyrite semiconductors.…”

Section: Introductionmentioning

confidence: 95%

“…In other, it can also achieve a high degree of conductivity for optoelectronic applications. [33] Solar cell capacitance simulator (SCAPS)-1D is a software program designed for simulating the behavior of 1D solar cells. Developed by the Burgelman group at the University of Ghent in Belgium, it is a robust program capable of modeling the performance of various solar cell types.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

Vijayan,

Thirumalaisamy,

Vijayachamundeeswari

et al. 2024

Energy Tech

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Designing effective strategies for mitigating energy crisis highlights a research gap in current solar cell technologies. This study explores the inherent physicochemical properties of thin films composed of copper gallium sulfide telluride (CuGa1−xCrx(S,Te)2) with chromium substitution, prepared through the chemical spray pyrolysis technique. The investigation showcases how the concept of intermediate band structuring contributes to enhancing solar cell efficiency. This enhancement can be attributed to the remarkable mobility (from 1.80 to 5.48 cm2 V−1 s−1) and conductivity (from 1.00 to 6.06 S cm−1) exhibited by pure and 0.1 chromium thin films, respectively. Notably, the Cr‐0.1‐substituted CGST film displays maximum photoresponsivity of 0.624 AW−1, an external quantum efficiency of 145%, and a detectivity of 2.37E10. The fabricated solar cell is subjected to theoretical simulation using solar cell capacitance simulator‐1D software, revealing an upward trend in efficiency from 7.13% to 11.23% with increasing Cr substitution from 0.025 to 0.1. This efficiency improvement can be ascribed to the reduction in bandgap (from 2.40 to 1.72 eV) and the creation of a sub‐band in CGST due to Cr incorporation, as substantiated by UV–vis and NIR spectroscopy. These outcomes suggest that Cr‐0.1‐substituted CGST holds promise as a potential thin film absorber material in solar photovoltaics.

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Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

Vijayan,

Thirumalaisamy,

Vijayachamundeeswari

et al. 2024

Energy Tech

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“…Soussi studied the optical and electrical characteristics of spin-coated La doped ZnO sheets. The visible-range transmittance of films was greater than 85%, and it improved with La concentration and absorption coefficient [29]. Light-emitting diodes, diode lasers, optical detectors, solar cells, and optoelectronic devices all depend on the optical characteristics of TFs.…”

Section: Introductionmentioning

confidence: 99%

The effect of Ar:O₂ gas ratios on the structural and optical properties of RF sputter-deposited La₂O₃-doped ZnO thin films

Pilli,

Sowjanya,

Shariq

et al. 2023

Semicond. Sci. Technol.

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Due to their unique scintillation, phosphorescence, magnetic, and catalytic properties, rare earth oxide compounds have recently become one of the most in-demand materials used in different ways. The current study investigated the impact of Ar:O2 gas flow variation on the deposition of La2O3-doped zinc oxide thin films (TFs) on silicon dioxide (SiO2) substrates using the radio frequency sputtering technique. FE-SEM analysis has shown a smooth surface topology and purity of La2O3-doped ZnO TFs. X-ray diffraction analysis exhibited a single-phase hexagonal wurtzite-type structure in TFs. A UV–Vis–IR spectrophotometer examined the optical characteristics of ZnO and La2O3-doped ZnO TFs in 300–800 nm wavelength range. The bandgap of La2O3 doped ZnO TFs changed from 2.9 to 3.1 eV as argon and oxygen concentrations in (Ar:O2) gas flow changed. A variation in optical constants such as dielectric constants, refractive index, and extinction coefficient was observed when ZnO and La2O3-doped ZnO TFs were exposed to variable (Ar:O2) gas flow ratios. The photoluminescence analysis of ZnO and La2O3-doped ZnO TFs was performed at an excitation wavelength of 330 nm. Atomic force microscopy further revealed that La2O3 doping resulted in smoother surfaces and smaller grain sizes. This comprehensive study provides valuable insights into the relationship between doping, gas composition, and the optical and structural properties of ZnO TFs. The obtained results on the optimal flow rate of argon gas provide valuable insights for determining the appropriate deposition conditions of La2O3-doped ZnO TFs, specifically for their application in solar thermal systems.

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“…ZnO is a widely used material in many fields. It is a white crystalline powder with good transparency in the visible light range and is an indirect bandgap semiconductor [1,2]. ZnO is well known for its piezoelectric and photocatalytic properties and is used in a wide range of applications, including solar cells, transparent electrodes, sensors, and light-emitting diodes [3].…”

Section: Introductionmentioning

confidence: 99%

First Principle Study of Structural, Electronic, Optical Properties of Co-Doped ZnO

Soussi,

Haounati,

Ait hssi

et al. 2023

J. Compos. Sci.

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In this theoretical study, the electronic, structural, and optical properties of copper-doped zinc oxide (CZO) were investigated using the full-potential linearized enhanced plane wave method (FP-LAPW) based on the density functional theory (DFT). The Tran–Blaha modified Becke–Johnson exchange potential approximation (TB-mBJ) was employed to enhance the accuracy of the electronic structure description. The introduction of copper atoms as donors in the ZnO resulted in a reduction in the material’s band gap from 2.82 eV to 2.72 eV, indicating enhanced conductivity. This reduction was attributed to the Co-3d intra-band transitions, primarily in the spin-down configuration, leading to increased optical absorption in the visible range. The Fermi level of the pure ZnO shifted towards the conduction band, indicating metal-like characteristics in the CZO. Additionally, the CZO nanowires displayed a significant blue shift in their optical properties, suggesting a change in the energy band structure. These findings not only contribute to a deeper understanding of the CZO’s fundamental properties but also open avenues for its potential applications in optoelectronic and photonic devices, where tailored electronic and optical characteristics are crucial. This study underscores the significance of computational techniques in predicting and understanding the behavior of doped semiconductors, offering valuable insights for the design and development of novel materials for advanced electronic applications.

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Structural, optical and electronic properties of La-doped ZnO thin films: Experimental study and DFT calculations

Cited by 21 publications

References 44 publications

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

The effect of Ar:O₂ gas ratios on the structural and optical properties of RF sputter-deposited La₂O₃-doped ZnO thin films

First Principle Study of Structural, Electronic, Optical Properties of Co-Doped ZnO

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Structural, optical and electronic properties of La-doped ZnO thin films: Experimental study and DFT calculations

Cited by 21 publications

References 44 publications

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films

First Principle Study of Structural, Electronic, Optical Properties of Co-Doped ZnO

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The effect of Ar:O₂ gas ratios on the structural and optical properties of RF sputter-deposited La₂O₃-doped ZnO thin films