2017
DOI: 10.1016/j.materresbull.2017.06.029
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Structural, optical and femtosecond third-order nonlinear optical properties of LiNbO 3 thin films

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Cited by 33 publications
(11 citation statements)
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“…Therefore, we infer that 2PA observed in Z-scan (at 1032 nm) could be via intermediate virtual states to defect states, as transitions from VB to the CB terminate at various defect states lying between CB and VB. 27 However, excitation-dependent PL studies also rule out the possibility of 3PA, which is most likely possible at or above 1350 nm in this case. We suspect that, beyond normal defect states that exist in these bulk crystals, the in-plane heterostructures present in Cu 0.33 In 1.30 P 2 S 6 also may cause significant bulk irregularities in electronic and mechanical structures of the crystal.…”
mentioning
confidence: 76%
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“…Therefore, we infer that 2PA observed in Z-scan (at 1032 nm) could be via intermediate virtual states to defect states, as transitions from VB to the CB terminate at various defect states lying between CB and VB. 27 However, excitation-dependent PL studies also rule out the possibility of 3PA, which is most likely possible at or above 1350 nm in this case. We suspect that, beyond normal defect states that exist in these bulk crystals, the in-plane heterostructures present in Cu 0.33 In 1.30 P 2 S 6 also may cause significant bulk irregularities in electronic and mechanical structures of the crystal.…”
mentioning
confidence: 76%
“…Therefore, the possible route for the occurrence of 2PA could be via intermediate virtual states to defect states. 27 The extracted value of the 2PA coefficient was found to be 10.3 cm/GW at 17.1 GW/cm 2 , which is 21 times larger than single crystalline Si (0.5 cm/GW) at near-infrared wavelengths. 28,29 The 2PA coefficient (β 2 ) of the Cu 0.33 In 1.30 P 2 S 6 crystal is found to be an order of magnitude larger compared to commonly used 2PA crystals and well-known semiconductors like LiTaO 3 (2 cm/GW at 800 nm), 30 KTiOPO 4 (1.8 cm/GW at 800 nm), 31 LiNbO 4 (3.5 cm/GW at 388 nm), 32 CdTe (0.02 cm/GW at 1300 nm), 33 ZnTe (4.5 cm/GW at 1060 nm), 34 and GaSe (6.3 cm/GW at 1060 nm).…”
mentioning
confidence: 90%
“…Today, with the rapid development of optoelectronic technology, the functional demands for NLO materials are increasing. Solution-processed flexibility makes chiral hybrid metal halides suitable for versatile miniaturized and integrated optical design on arbitrary substrate . The development of chiral hybrid metal halides, a new type of NLO materials, promotes the evolution of nonlinear optoelectronic information technology and material science.…”
Section: Discussionmentioning
confidence: 99%
“…Since the band gap of SnS nanosheets (1.6 eV) is slightly larger than the energy of excitation photon (1.55 eV), the saturable absorption response arises from optical transitions and band filling of edge states. 54 On the other hand, absence of any signal in the Z-scan measurement for pure acetone (see Supplementary Fig. 3) ensures that saturable absorption is solely the property of layered SnS.…”
Section: Saturable Absorptionmentioning
confidence: 99%