Structural, optical, and magnetic properties of Ho-implanted GaN thin films

Lo, Fang Yuh; Guo, Jhong Yu; Ney, V.; Ney, Andreas; Chern, Ming–Yau; Melnikov, Alexander; Pezzagna, Sébastien; Reuter, D.; Wieck, A. D.; Massies, J.

doi:10.1088/1742-6596/266/1/012097

J. Phys.: Conf. Ser.

2011

DOI: 10.1088/1742-6596/266/1/012097

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Structural, optical, and magnetic properties of Ho-implanted GaN thin films

Fang Yuh Lo

Jhong Yu Guo

V. Ney

et al.

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2012

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Room Temperature Ferromagnetism in Ga1−xHoxN (x=0.0 and 0.05) Diluted Magnetic Semiconductor Thin Films

Murtaza¹,

Iqbal²,

Xu³

et al. 2012

Chinese Journal of Chemical Physics

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Holmium doped GaN diluted magnetic semiconductor thin films have been prepared by thermal evaporation technique and subsequent ammonia annealing. X-ray diffraction measurements reveal all peaks belong to the purely hexagonal wurtzite structure. Surface morphology and composition analysis were carried out by scanning electron microscopy and energy dispersive spectroscopy respectively. The room temperature ferromagnetic properties of Ga1−xHoxN (x=0.0, 0.05) films were analyzed using vibrating sample magnetometer at room temperature. Magnetic measurements showed that the undoped films (i.e. GaN) exhibited diamagnetic behavior, while the Ho-doped (Ga0.95Ho0.05N) film exhibited a ferromagnetic behavior.

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Room Temperature Ferromagnetism in Ga1−xHoxN (x=0.0 and 0.05) Diluted Magnetic Semiconductor Thin Films

Murtaza¹,

Iqbal²,

Xu³

et al. 2012

Chinese Journal of Chemical Physics

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show abstract

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Structural, optical, and magnetic properties of Ho-implanted GaN thin films

Cited by 1 publication

References 8 publications

Room Temperature Ferromagnetism in Ga1−xHoxN (x=0.0 and 0.05) Diluted Magnetic Semiconductor Thin Films

Room Temperature Ferromagnetism in Ga1−xHoxN (x=0.0 and 0.05) Diluted Magnetic Semiconductor Thin Films

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