Structural, optical and magnetic properties of Ga1−xMnxN films grown by MOCVD

Yang, Xuelin; Chen, Z T; Zhao, Lifeng; Zhu, W X; Wang, C D; Pei, Xuan; Zhang, G Y

doi:10.1088/0022-3727/41/24/245004

Cited by 7 publications

(5 citation statements)

References 36 publications

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“…The CL spectrum shows the progressive reduction in intensity of band-edge luminescence with increasing Co concentration. The decrease in the intensity of band-edge luminescence with Co doping seems to be due to the presence of traps or defect states in the band gap originated by the doping of Co (Yang et al 2008;Lvill et al 2008). The band at 3.263 eV for undoped and the bands at 3.21 eV for Co-doped GaN were observed, these emissions were also identified by previous authors and assigned as donor-acceptor pair emission (DAP) for doped and undoped GaN (Lagerstedt and Monemar 1974;Loan et al 2009).…”

Section: Cathodoluminescencesupporting

confidence: 68%

Synthesis and characterization of pure and Co-doped gallium nitride nanocrystals

et al. 2012

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Pure and Co-doped gallium nitride (GaN) (5 and 8 mol%) nanocrystals were synthesized by nitridation of Ga-EDTA.NH 4 and Co-Ga-EDTA.NH 4 complexes. Pure and 5 mol% cobalt-doped GaN did not show any impurity phases in the X-ray diffraction and Raman analysis, whereas 8 mol% Co-doped GaN show secondary phase formation. Transmission electron microscopic study revealed the broad crystal size distribution ranging from 10 to 140 nm. Cathodoluminiscence spectra measured at 20 K shows the suppression of GaN band edge emission with increasing Co concentration. Magnetic measurements of Co-doped GaN revealed a ferromagnetic behavior up to room temperature. The saturation magnetization value increases with increasing impurity phase separation. X-ray photoelectron spectroscopy revealed evidence on the oxidation states of cobalt and excludes the possibility of Co clusters in the doped samples.

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Section: Cathodoluminescencesupporting

confidence: 68%

Synthesis and characterization of pure and Co-doped gallium nitride nanocrystals

et al. 2012

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“…The further evidences of these type defects were also observed by the Raman spectroscopy and calthodoluminescence spectroscopy in our previous work. 14,26 With increasing the Mn concentration, the V N or V N related complex are formed and result in forming the local vibrational mode and the energy level observed by the Raman and calthodoluminescence spectroscopy respectively. The V N -Mn Ga complex is predicated to have low formation energies and is very stable when the Fermi level is at midgap of GaN.…”

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confidence: 99%

Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects

Yang

Zhu

Wang

et al. 2009

Applied Physics Letters

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The vacancy-type defects in (Ga,Mn)N films grown by metal organic chemical vapor deposition were studied by positron annihilation technique. Doppler broadening spectra were measured for the films. Compared to the undoped GaN film, the positron trapping defects in the (Ga,Mn)N films have been changed to a new type defects and its concentration increases with the increasing Mn concentration. By analyzing the S-W correlation plots and our previous results, we identify this type defects in the (Ga,Mn)N as VN-MnGa complex. This type of defects should be considered when understand the magnetic properties in a real (Ga,Mn)N system.

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“…We demonstrated that the ferromagnetism decline of the film could be attributed to the valence state variation from Mn +3 to Mn +2 induced by electron compensation with Fermi level rising after Si co-doping. And, this resulted in t 2 state of Mn, deemed to be related to ferromagnetism origin via the double-exchange interaction in our previous works [32][33][34], being totally occupied. Then, we discuss the corresponding results about the electrical property of sample S 2 .…”

Section: Resultsmentioning

confidence: 86%

Influence of Si co-doping on magnetic, electrical and optical properties of Ga1–x Mn x N film grown by MOCVD

Zhang

Yang

Zhang

et al. 2011

Sci. China Technol. Sci.

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A detailed study is presented on magnetic, electrical and optical properties of Ga 1-x Mn x N: Si film grown by metal organic chemical vapor deposition (MOCVD) with high-purity SiH 4 as the Si dopant source. The room-temperature field dependence magnetization and zero-field-cooled (ZFC)/field-cooled (FC) measurements indicate that the film remains room-temperature ferromagnetism and it declines slightly after Si co-doping. However, room-temperature Hall measurements indicate that the electrical property of the film improves distinctly compared with Ga 1-x Mn x N. Cathode luminescence (CL) measurements show an obvious enhancement in luminous property and different peak strength changes at three different positions. Therefore, we demonstrate that Fermi level and the electron structure of Mn atoms will change with variation of the impurities co-doped and the intrinsic defects and this may be related with room-temperature ferromagnetism and the other corresponding properties of the film.

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Structural, optical and magnetic properties of Ga_1−xMn_xN films grown by MOCVD

Cited by 7 publications

References 36 publications

Synthesis and characterization of pure and Co-doped gallium nitride nanocrystals

Synthesis and characterization of pure and Co-doped gallium nitride nanocrystals

Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects

Influence of Si co-doping on magnetic, electrical and optical properties of Ga1–x Mn x N film grown by MOCVD

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