Structural, optical and photocurrent properties of undoped and Al-doped ZnO thin films deposited by sol–gel spin coating technique

Mahroug, Abdelhafid; Boudjadar, S.; Hamrit, S.; Guerbous, L.

doi:10.1016/j.matlet.2014.07.099

Cited by 88 publications

(40 citation statements)

References 15 publications

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“…All films are polycrystalline in nature with well-defined diffraction peaks corresponding to the (100), (002), (101), (102), (110), (103), (112) and (201) planes of the hexagonal wurtzite-type crystal structure of ZnO (JCPDS card 36-1451) 12 . In particular, the ZnO films prepared with isopropanol and ethanol solvents exhibit high intensity of the (002) diffraction peak as demanded for optoelectronic film applications 1,2 .…”

Section: Resultsmentioning

confidence: 99%

“…Thus, ZnO thin films have been prepared by a large number of techniques such as chemical bath deposition 6 , sputtering 7 , SILAR 8 , spray pyrolysis 9 , chemical vapor deposition (CVD) 10 and sol-gel 11 . Among these, sol-gel spin-coating has received increasing attention because it is a simple and cost-effective process for the preparation of uniform oxide films with adequate control of their morphology, structure and stoichiometry 12 . The electrical conductivity and optical properties of ZnO thin films have been associated with the increase of (002)-orientation degree of its hexagonalwurtzite crystal structure 2,[13][14] .…”

Section: Introductionmentioning

confidence: 99%

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Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

et al. 2016

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Zinc oxide (ZnO) films were prepared on amorphous quartz substrates by sol-gel spin-coating using Zn(CH 3 COO) 2 •2H 2 O precursor. Isopropanol, ethanol and 2-methoxyethanol were used as solvents. The film drying temperature was kept constant at 200 ºC and the annealing temperature was varied from 400 to 800 ºC. Highly transparent and (002)-oriented hexagonal wurtzite-type ZnO films were obtained using isopropanol solvent. The ZnO films prepared at T anneal = 600 ºC showed the highest (002) preferential orientation, however it was not the significant feature to achieve low resistivity. The uniform and (002)-oriented ZnO films prepared at T anneal = 400 ºC display the highest transmittance (>93% in the visible region) and the lowest resistivity (7.1 Ω•cm).

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

et al. 2016

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“…In recent years, Zinc oxide has attracted great interests because of their potential applications in optics and optoelectronic devices such as ultraviolet (UV) photodetectors, light-emitting diodes (LEDs), laser diodes (LDs), catalysts, gas sensors and transparent conducting electrodes (Hou et al, 2014;Mahroug et al, 2014;Abeda et al, 2015;Vijayalakshmi et al, 2014) due to its wide band-gap (3.37eV) and large exciton binding energy (60 meV) (Özgür et al, 2005). Additionally, the excellent optical properties of ZnO and the possibility of band gap engineering through transition metal ions (TM = Co; Mn; Ni …) doping strongly encourages the exploration of the magneto-optical properties of the TM-doped ZnO system.…”

Section: Introductionmentioning

confidence: 99%

Studies on Structural, Surface Morphological, Optical, Luminescence and UV Photodetection Properties of Sol Gel Oxides Thin Films

MAHROUG¹,

AMARI²,

BOUKHARI³

et al. 2018

The International Conference on Advanced Materials and Systems

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ZnO and ZnCoO thin films have been deposited onto glass substrates by sol-gel spin coating method. Zinc acetate dihydrate, cobalt acetate tetrahydrate, Isopropanol and monoethanolamine (MEA) were used as a precursor, doping source, solvent and stabilizer respectively. The molar ratio of MEA to ions metal was maintained at 1.0 and a concentration of metal ions is 0.6 mol.L -1 .The XRD results showed that both films crystallized under hexagonal wurtzite structure and presented a preferential orientation along the c-axis with the maximum crystallite size was found is 25nm. Atomic force microscope (AFM) images revealed the good uniformity for both films, an increase of surface roughness is observed with doping. The average transmittance in the visible region was higher than 85% for both films and the optical band gap of Zinc oxide films decreased with Co doping. Photoluminescence of the films showed a ultraviolet (UV) and defect related visible emissions like violet, blue and green, and indicated that cobalt doping resulted in red shifting of UV emission and the reduction in the UV and visible emissions intensity. Ours thin films shows the best photocurrent properties.

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“…It has a direct and wide band gap of 3.3 eV in the near-UV spectral region [5], and a large exciton binding energy (60 meV) at room temperature [6]. Its consider that the ZnO is an n type semiconducting with high density and good crystal-line quality [7], but the use of ZnO as a semiconductor in electr-onic devices due to the high transmittance and good electrical conductivity [8]. Therefore, ZnO thin films are promising candid-ates for applications in shortwavelength light-emitting devices, lasers, field emission devices, solar cells and sensors [4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…Nanocrystalline ZnO thin films can be produced by several techniques such as reactive evaporation [11], molecular beam epitaxy (MBE), magnetron sputtering technique [12,13], pulsed laser deposition (PLD) [14], spray pyrolysis [15], sol-gel process [16], chemical vapor deposition, and electrochemical deposition [17].…”

Section: Introductionmentioning

confidence: 99%

Study of the Optical Properties and Structure Zinc Oxide Thin Films Prepared by Spin Coating Technique

Benramache¹,

Benhaoua²

2016

J. Nano- Electron. Phys.

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We investigated the structural and optical properties of zinc oxide (ZnO) thin film as the n-type semiconductor. In this work, the sol-gel method used to fabricate ZnO thin film on glass substrate at different solution molarities of 0.1, 0.3 and 0.5 mol/l of zinc acetate dehydrate. The DRX analyses indicated that the coated ZnO films exhibit an hexagonal structure wurtzite and (002) oriented with the maximum value of crystallite size G  69.32 nm is measured wi 0.5 mol/l. The thin film exhibit an average optical transparency is over 80 % at high molarity, in the visible region, found that the optical band gap energy was increased up to 3.25 eV at 0.5 mol/l. The minimum value of Urbach energy of ZnO thin film was achieved with 0.5 mol/l.

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Structural, optical and photocurrent properties of undoped and Al-doped ZnO thin films deposited by sol–gel spin coating technique

Cited by 88 publications

References 15 publications

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

Studies on Structural, Surface Morphological, Optical, Luminescence and UV Photodetection Properties of Sol Gel Oxides Thin Films

Study of the Optical Properties and Structure Zinc Oxide Thin Films Prepared by Spin Coating Technique

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