Structural, Optical and Photoelectric Properties of Crystals and Heterostructures Based on the In₄Se₃, In₄Te₃, and In₄(Se₃)_1-x(Te₃)_x Semiconductors

Tuning in optoelectronic properties of In/Te bilayer heterostructure upon annealing at different temperatures: surface wettability and photo response study for photonic and solar cell applications

“…This material possesses an intrinsic narrow bandgap (<1 eV) and high photoelectronic output for infrared photons. 12,13 It also exhibited strong anharmonicity in the low optical and acoustic regions. Such behavior originates from nonbonding and antibonding In 4 valence electrons with their neighbours.…”