Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

Gadallah, A.–S.; El-Nahass, M.M.

doi:10.1155/2013/234546

Cited by 115 publications

(54 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…, (31,32) zinc interstitial state [Zn i ], (33) oxygen antisite state [O Zn ], (34) oxygen interstitial level [O i ], (31) and zinc vacancy-related transitions. (34,35) For samples S1 and S2, with the introduction of Er, the BEC band with a peak wavelength of 373.7 nm as sample S0 can be identified. Besides, an emission band with a peak wavelength of 373.2 nm (3.323 eV) can be observed.…”

Section: Resultsmentioning

confidence: 99%

Resistance Study of Er-doped Zinc Oxide Diode by Spray Pyrolysis

2018

Sensors and Materials

View full text Add to dashboard Cite

Undoped and erbium-doped zinc oxide followed by indium-doped zinc oxide layers on p-type Si substrate were prepared by spray pyrolysis with zinc acetate, erbium acetate, and indium nitrate precursors. The surface morphology and crystalline quality were investigated. Using a front-and backside metallization process, diodes were fabricated. The current-voltage characteristics of these diodes were analyzed. The structural resistance, which is an important issue in gas sensing application, shows an increase-decrease behavior with the increase of erbium contents in zinc oxide. With a reverse bias in excess of 6 V, two distinct green light emissions with 536 and 555 nm wavelength and one red light emission at around 664 nm of the 5% erbium-doped zinc oxide diode can be observed. The structural resistance character, as well as the ideality factor of these diodes were analyzed and discussed.

show abstract

Section: Resultsmentioning

confidence: 99%

Resistance Study of Er-doped Zinc Oxide Diode by Spray Pyrolysis

2018

Sensors and Materials

View full text Add to dashboard Cite

show abstract

“…Various important structural parameters including the average crystallite size, defect density, lattice constant, lattice strain and stress were extracted from the XRD measurements to analyze the nature of crystal growth of ZnO in details. The average crystallite size (D) for (002) crystallographic plane [preferred orientation in XRD spectra] has been calculated as 19.9632 nm using Scherrer equation [3].…”

Section: Methodsmentioning

confidence: 99%

“…Defect density (d) is defined as the length of the dislocation line per unit volume and it is given as [3]:…”

Section: Methodsmentioning

confidence: 99%

“…It is a low cost, nontoxic material, having high electrochemical stability [3,4]. Nanostructured ZnO-based devices have drawn significant attention of the researchers over the past decade for their possible deployment in a variety of electronic and optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

“…This is because the sol gel technique offers the possibility of excellent compositional control, simplicity of deposition irrespective of the nature of substrate, homogeneity in the derived film, lower crystallization temperature and low production costs [11,14,15].Various research groups, viz. Gadallah et al [3], Sahal et al [4], Yakuphanoglu et al [11], Huang et al [14] have reported synthesis of ZnO thin film using sol-gel route followed by either spin coating or deep coating technique. The as-deposited sol-gel-spin-coat derived ZnO nanostructures have been extensively used for making electronic and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Fabrication and experimental characterization of a sol–gel derived nanostructured n-ZnO/p-Si heterojunction diode

Singh

Hazra

Tripathi

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

In this paper, fabrication and characterization of a sol-gel derived n-ZnO nanoparticle/p-Si heterojunction diode has been presented. A strong diffraction peak (002) obtained from XRD spectra of sol-gel derived ZnO thin film indicates that the growth of hexagonal wurtzite ZnO nanoparticles are preferably along the c-axis. The surface morphological features extracted from AFM and SEM images predict the uniform growth of ZnO nanoparticles over the p-Si substrate. The optical properties of ZnO nanoparticles have been measured in the spectral range of 300-1000 nm using ellipsometer and photoluminescence spectroscopy. The optical transmittance of ZnO nanoparticles has been observed between 81 and 92.66 % in visible region and the optical band gap has been found out to be 3.24 eV. Finally, metallic contacts were deposited on top of ZnO layer and bottom of Si layer to perform electrical characterization of nanostructured n-ZnO/p-Si heterojunction diodes. Electrical parameters including reverse saturation current, ideality factor, barrier height, rectification ratio have been calculated to explore the potential of the device for futuristic nanoelectronic and optoelectronic device applications.

show abstract

Structural and optical properties of Ti and Cu co‐doped ZnO thin films for photovoltaic applications of dye sensitized solar cells

et al. 2020

View full text Add to dashboard Cite

Summary ZnO, 1% Ti doped ZnO and 1% Ti and (0.5%, 1%, and 1.5%) Cu co‐doped ZnO thin films are deposited on fluorine doped tin oxide glass substrates using sol‐gel technique. The impact of Ti and Cu co‐doping on optical, structural, and photovoltaic properties of ZnO thin films have been analyzed. X‐ray diffraction also confirms the hexagonal wurtzite crystal structure of the film. The 1% Ti and 1% Cu co‐doping percentage has an astonishing impact on the structural properties of the doped film, such as large grain size (19 nm), d‐spacing (2.48 Å), small dislocation line density (2.96 × 1015 m−2), lattice parameters (a = b = 3.2 Å, c = 5.2 Å), bond length (1.9 Å) and positional parameter (3.7 × 10−1) of the ZnO thin film. Optical parameters like reflectance, absorbance, transmittance, refractive index, and dielectric constants are calculated in the range of spectral from (250‐750) nm by using an ultraviolet ‐ visible spectrophotometer. In the visible region, all the films have approximately 85% transmittance, which is excellent for solar cells. The ZnO film prepared at the co‐doping percentage of 1% Ti and 1% Cu has high absorbance, high refractive index (2.09) and small band gap energy (3.37 eV) as compared to other doped films. The dye‐sensitized solar cells of these films as a Photoanode have been fabricated and studied the efficiency variation of films. It is found that the performance of the dye‐sensitized solar cell (DSSC) using a Ti‐Cu co‐doped film is much better than a pure ZnO film. The highest efficiency of DSSC 2.38% is achieved in the dye‐sensitized solar cell by using a 1% Ti and 1% Cu co‐doped ZnO thin film. When Ti is doped in ZnO then the surface area and pore size of the ZnO increased, which increase the dye loading ability. Cu reduces the recombination rate and enhances the electron injection efficiency rate from the dye to the conduction band of ZnO. Therefore, it is suggested that the thin films prepared by co‐doping of Cu and Ti into ZnO will upgrade the efficiency of cell.

show abstract

Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

Cited by 115 publications

References 30 publications

Resistance Study of Er-doped Zinc Oxide Diode by Spray Pyrolysis

Resistance Study of Er-doped Zinc Oxide Diode by Spray Pyrolysis

Fabrication and experimental characterization of a sol–gel derived nanostructured n-ZnO/p-Si heterojunction diode

Structural and optical properties of Ti and Cu co‐doped ZnO thin films for photovoltaic applications of dye sensitized solar cells

Contact Info

Product

Resources

About