Structural Optimization and Load Paths

Kamimura, Masato; Hatta, Yoshiyuki; Ito, Shuta; Koga, Yoshinori; Sakurai, Toshiaki; Takahashi, Kazuhiro

doi:10.1299/kikaia.74.6

Cited by 7 publications

(2 citation statements)

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“…This corresponds to our intuitive expectation. Structural Optimization Using U* Index [5]. To validate the concept of U* being applicable to structures, an optimization process using a Genetic Algorithm (GA) in terms of U* was introduced.…”

Section: Distribution Of U* and Load Paths [2]mentioning

confidence: 99%

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Load Transfer Analysis Using Indexes U* and U** for Truck Cab Structures in Initial Phase of Frontal Collision

Wang

Nohara²,

Ishii³

et al. 2010

AMR

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A new index U* which represents load paths in structures was applied to a truck cab under collision. After obtaining the deformed body by a dynamic crash simulation, U* for the extracted deformed body was statically calculated. The distributions of U* were compared with the values of U** obtained in our previous report. The U* and U** distributions show almost the same pattern. However, the absolute value of U* is larger than U** by about 1.6 times. The difference is inevitable because of the difference in their definitions. The concepts of U*sum and its histogram were used to express the effectiveness of the load transfer. Using these expressions, it was shown that the main member of this cab transfers the loading effectively.

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Section: Distribution Of U* and Load Paths [2]mentioning

confidence: 99%

“…The parameter U* and U** have been used to express the load transfer and load paths in vehicle bodies [1][2][3][4][5][6][7]. In the present study, we use these indexes to express the load transfer and load paths in a truck compartment during the early stages of a frontal impact in the interest of improving compartment stiffness.…”

Section: Introductionmentioning

confidence: 99%

Load Transfer Analysis Using Indexes U* and U** for Truck Cab Structures in Initial Phase of Frontal Collision

Wang

Nohara²,

Ishii³

et al. 2010

AMR

Self Cite

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Structural Improvement of Vehicle Component Based on the Load Path and Load Distribution Analysis

Wang

Wang²,

et al. 2021

Int.J Automot. Technol.

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Extended Theory of U* to Electrostatic Problem and Its Application to Pore Arrangements for Porous Low-k and High-k Dielectric Film

Miyagawa

Omiya

Takahashi

2010

JMMP

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This paper discusses the effects of pore arrangements on the dielectric property of porous low-k and high-k dielectrics. Higher performance large scale integration (LSI) requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical strength causes fractures of porous low-k dielectrics during Chemical Mechanical Polishing (CMP) process. Therefore, it is important to develop porous low-k dielectrics with high mechanical strength and low dielectric constant. On the other hand, porous high-k dielectrics are needed as ferroelectrics. It is also important to understand the dielectric property of porous high-k dielectrics. We studied the dielectric property of porous low-k and high-k dielectrics by finite element method and U* theory. The index U* is used to indicate load paths in a structure. We extended U* theory to the electrostatic field problem and investigated the dielectric property of dielectrics. By using U* in electrostatic field analysis, the dielectric performance of porous low-k and high-k dielectrics becomes more clear.

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Structural Optimization and Load Paths

Cited by 7 publications

References 0 publications

Load Transfer Analysis Using Indexes U* and U** for Truck Cab Structures in Initial Phase of Frontal Collision

Load Transfer Analysis Using Indexes U* and U** for Truck Cab Structures in Initial Phase of Frontal Collision

Structural Improvement of Vehicle Component Based on the Load Path and Load Distribution Analysis

Extended Theory of U<sup>*</sup> to Electrostatic Problem and Its Application to Pore Arrangements for Porous Low-<i>k</i> and High-<i>k</i> Dielectric Film

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