Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films

Shinde, S.S.; Shinde, Pravin S.; Oh, Youngwoo; Haranath, D.; Bhosale, C.H.; Rajpure, K.Y.

doi:10.1016/j.apsusc.2012.06.058

Cited by 116 publications

(46 citation statements)

References 45 publications

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“…6. It showed that the peaks at around 303 and 436 cm -1 in the low wave-number region had acoustic combinations [30]. The peaks at around 620 and 673 cm -1 were found in the intermediate frequency region from 540 to 800 cm -1 , having optical and acoustic phonon combinations [30,31].…”

Section: Raman Spectroscopymentioning

confidence: 96%

“…The mode detected at 303 cm -1 exhibits A 1 symmetry and might correspond to B 1 high -B 1 low phonons mode [30,31]. The peak at 436 cm -1 corresponds to E 2 high phonons mode of ZnMgO wurtzite structure [30][31][32][33]. The E 2 high peak positions shift with wave number by *2 cm -1 from undoped ZnO peak (438 cm -1 ) due to the presence of nitrogen and magnesium in ZnO crystal [30,33].…”

Section: Raman Spectroscopymentioning

confidence: 98%

“…The peak at 436 cm -1 corresponds to E 2 high phonons mode of ZnMgO wurtzite structure [30][31][32][33]. The E 2 high peak positions shift with wave number by *2 cm -1 from undoped ZnO peak (438 cm -1 ) due to the presence of nitrogen and magnesium in ZnO crystal [30,33]. Shifting of this peak can be explained by three possible reasons.…”

Section: Raman Spectroscopymentioning

confidence: 98%

“…Wang et al [32] has also mentioned the existence of Raman peak at 303 cm -1 . The mode detected at 303 cm -1 exhibits A 1 symmetry and might correspond to B 1 high -B 1 low phonons mode [30,31]. The peak at 436 cm -1 corresponds to E 2 high phonons mode of ZnMgO wurtzite structure [30][31][32][33].…”

Section: Raman Spectroscopymentioning

confidence: 99%

“…Among these possible reasons, the first two are less effective in describing the observed low wave number shift of the E 2 high phonon modes due to lighter mass and smaller radius of the dopant atoms N and Mg compared to Zn. Therefore, third reason is more significant for explaining this shift [30][31][32]. Table 1 …”

Section: Raman Spectroscopymentioning

confidence: 99%

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Effect of annealing temperature on optical and electrical properties of nitrogen implanted p-type ZnMgO thin films

Saha

Pandey

Nagar

et al. 2015

J Mater Sci: Mater Electron

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p-type nitrogen doped Zn 1-x Mg x O (x = 0.15) thin films were prepared on n-type silicon substrates by RF sputtering. Plasma-immersion-ion technique and rapid-thermal process were used to implant nitrogen and annealing (700-1000°C) of these films respectively. Annealed samples at 700, 800, 900 and 1000°C showed effective improvement of the structural and optical properties. X-ray diffraction spectra showed improvement in \002[ orientation of films with increase in annealing temperatures. In Raman spectra, the peak at 436 cm -1 corresponds to E 2 high phonons mode of ZnMgO wurtzite structure and FWHM of this peak decreases with increase in annealing temperature, indicating improvement in crystalline quality. The scanning electron microscopy results demonstrate that nitrogen-implanted ZnMgO film annealed at 1000°C has better morphology in comparison to other films. Low-temperature (15 K) photoluminescence measurements revealed acceptorbound exciton peak at 3.45 eV and donor-bound exciton peak around 3.52 eV. Increased intensity of acceptor-bound exciton peak with increasing annealing temperature proves that nitrogen implantation and subsequent annealing increase the acceptor concentration in the film, indicating tendency for p-type conduction at higher annealing temperature. The film annealed at 1000°C was observed to produce only acceptor-bound exciton emission and no donor-bound exciton emission was occurred. Hall-effect measurements showed p-type conductivity for annealed films in temperature range at 800-1000°C. The acceptor level at 3.45 eV in PL spectra is responsible for this p-type conduction in these films. The highest hole concentration of 1.91 9 10 15 cm -3 has been achieved for film annealed at 1000°C.

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Section: Raman Spectroscopymentioning

confidence: 96%

Section: Raman Spectroscopymentioning

confidence: 98%

Section: Raman Spectroscopymentioning

confidence: 98%

Section: Raman Spectroscopymentioning

confidence: 99%

Section: Raman Spectroscopymentioning

confidence: 99%

See 3 more Smart Citations

Effect of annealing temperature on optical and electrical properties of nitrogen implanted p-type ZnMgO thin films

Saha

Pandey

Nagar

et al. 2015

J Mater Sci: Mater Electron

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Spray Pyrolysis of Nano‐Structured Optical and Electronic Materials

Sankır

Aydın

Ugur

et al. 2015

Advanced Functional Materials

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Doping Concentration Influenced Pyro‐Phototronic Effect in Self‐Powered Photodetector Based on Ga‐Incorporated ZnO Microwire/p⁺‐GaN Heterojunction

Wan

Jiang

et al. 2021

Advanced Optical Materials

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wireless multifunctional sensing, and so on. [1][2][3][4] Generally, self-powered PDs can be divided into photovoltaic detectors and thermal detectors according to their different operational mechanisms. [5] Photovoltaic detectors generate a voltage that is proportional to the incident radiation intensity due to their voltage generating characteristics. [6][7][8] Thermal detectors, especially pyroelectric detectors, convert photon energy to thermal energy, leading to a temperature variation in the materials and a current flow in the external circuit. [9,10] Recently, pyro-phototronic effect, combining photovoltaic effect and pyroelectric effect, has been proposed to design self-powered PDs with perfect response performances. [11,12] Despite this progress, the unambiguous working mechanism on pyroelectric-photovoltaic synergistic effect still impedes the realization of high-performance self-powered PDs. As previously reported, pyroelectric polarization charge or potential (pyropotential) is redistributed along the polar direction under time-variant temperature. [9,[13][14][15] By introducing pyropotential, the charge transporting through the p-n/Schottky junction in self-powered PDs can be tuned, resulting in the modulation of device performance. [16][17][18][19] However, in the practical experiments and applications, the pyro-phototronic effect is sometimes absent or extremely weak in the different pyroelectric material-based p-n/Schottky junction PDs. [18,20,21] Even if the pyro-phototronic effect exists, the experimental results, such as the magnitude of the enhancement and the decay time of pyroelectric current, are quite different and fuzzy. [22,23] These phenomena indicate that some important internal physical factors that affect the pyro-phototronic effect need to be revealed further. [23,24] Doping via incorporating electron donor or acceptor elements into the host crystal in semiconductors is a direct approach to design highly efficient electronic/optoelectronic devices. Accordingly, the electrical properties of semiconductor materials, such as conductivity and carrier concentration, can be tuned. The capability of controlling the electrical properties and the carrier transport characteristics has a significant influence on photovoltaic effect in the self-powered PDs. [25][26][27] In addition to tuning p-n/Schottky junction characteristics, Pyro-phototronic effect, a coupling of pyroelectric and photovoltaic effect, provides an effective method to improve the performance of self-powered photodetectors (PDs). Developing high-performance PDs, the influence of pyroelectric effect on photoelectric characteristics and coupling mechanism deserves further study. Herein, a self-powered PD made of Ga-incorporated ZnO microwire (ZnO:Ga MW) and p + -GaN layer is fabricated, and the performance influenced by pyro-phototronic effect is investigated systematically. Through varying Ga concentration in ZnO:Ga MWs, the pyroelectric current gradually dominates the photocurrent of PDs under ultraviolet illumination; while t...

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Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films

Cited by 116 publications

References 45 publications

Effect of annealing temperature on optical and electrical properties of nitrogen implanted p-type ZnMgO thin films

Effect of annealing temperature on optical and electrical properties of nitrogen implanted p-type ZnMgO thin films

Spray Pyrolysis of Nano‐Structured Optical and Electronic Materials

Doping Concentration Influenced Pyro‐Phototronic Effect in Self‐Powered Photodetector Based on Ga‐Incorporated ZnO Microwire/p⁺‐GaN Heterojunction

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Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films

Cited by 116 publications

References 45 publications

Effect of annealing temperature on optical and electrical properties of nitrogen implanted p-type ZnMgO thin films

Effect of annealing temperature on optical and electrical properties of nitrogen implanted p-type ZnMgO thin films

Spray Pyrolysis of Nano‐Structured Optical and Electronic Materials

Doping Concentration Influenced Pyro‐Phototronic Effect in Self‐Powered Photodetector Based on Ga‐Incorporated ZnO Microwire/p+‐GaN Heterojunction

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Product

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Doping Concentration Influenced Pyro‐Phototronic Effect in Self‐Powered Photodetector Based on Ga‐Incorporated ZnO Microwire/p⁺‐GaN Heterojunction