Structural ordering in a silica glass matrix under Mn ion implantation

Zatsepin, D. A.; Green, R J; Hunt, Adrian; Kurmaev, E.Z.; Гаврилов, Н. В.; Moewes, A.

doi:10.1088/0953-8984/24/18/185402

Cited by 5 publications

(5 citation statements)

References 33 publications

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“…4, we show the Si L 2,3 XES spectra of the implanted samples, along with the reference a-SiO 2 . Since the spectra of a-SiO 2 and Si are significantly different [24], using this technique one can detect the formation of Si\Si bonds, and thus the relative amount of damage to the SiO 2 host due to the implantation [25]. Here we see that the spectra are all very similar, but the Pb implanted SiO 2 shows some slight variations.…”

Section: Resultsmentioning

confidence: 60%

Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica

Green¹,

Hunt²,

Zatsepin³

et al. 2012

Journal of Non-Crystalline Solids

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The electronic structures of Sn and Pb implanted SiO 2 are studied using soft X-ray absorption (XAS) and emission (XES) spectroscopy. We show, using reference compounds and ab initio calculations, that the presence of Pb\O and Sn\O interactions can be detected in the pre-edge region of the oxygen K-edge XAS. Via analysis of this interaction-sensitive pre-edge region, we find that Pb implantation results primarily in the clustering of Pb atoms. Conversely, with Sn implantation using identical conditions, strong Sn\O interactions are present, showing that Sn is coordinated with oxygen. The varying results between the two ion types are explained using both ballistic considerations and density functional theory calculations. We find that the substitution of Pb into Si sites in SiO 2 requires much more energy than substituting Sn in these same sites, primarily due to the larger size of the Pb ions. From these calculated formation energies it is evident that Pb requires far higher temperatures than Sn to be soluble in SiO 2 . These results help explain the complex processes which take place upon implantation and determine the final products.

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Section: Resultsmentioning

confidence: 60%

Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica

Green¹,

Hunt²,

Zatsepin³

et al. 2012

Journal of Non-Crystalline Solids

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“…The wide-angle XRD pattern of the sample sintered at 1040°C is shown in Fig. 2(b), the broad diffraction peak of the sintered sample corresponds to amorphous phase, indicating there is no crystallization in the process of sintering [20]. We can also find a diffraction peak at 2θ of 21.6 º, which is cristobalite phase according to JCPDS card (No.…”

Section: Resultsmentioning

confidence: 91%

Preparation of Highly Transparent Silica Glass by SPS Sintering of SBA-15

Shi

Wang

Luo

2016

MSF

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Silica glass was prepared via the spark plasma sintering (SPS) method by using SBA-15 as the starting material. Five temperatures (1000, 1010, 1020, 1030 and 1040°C) were selected as the final sintering temperature above 600°C. The transparent silica glass was prepared by SPS sintering of mesoporous silica SBA-15 at 1040°C. The impact of temperature structure collapse of SBA-15, the structure and transmittance of the glass were studied using X ray diffraction, SEM, TEM, Infrared analysis, Raman analysis and UV-VIS spectrophotometer. Results show that SBA-15 collapsed completely at 1040°C, the sintered glass had high transmittance of above 90% in visible spectra, and its hardness was 6.96 Gpa, and that the sintered transparent sample was silica glass. The work demonstrated a novel strategy to use SPS to prepare highly transparent silica glass by sintering of SBA-15.

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“…Such spectral changes have been observed previously in ion-implanted SiO 2 and can be ascribed to the formation of Si-Si bonds, which can arise due to the creation of O vacancies during the implantation process. 26 With higher fluence one expects more damage, which leads to an increasing concentration of pure Si regions as indicated by the trend in the Si L edge spectra.…”

Section: Effects On Host Electronic Structurementioning

confidence: 95%

Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO2

Green

Zatsepin

Onge

et al. 2014

Journal of Applied Physics

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Cobalt and manganese ions are implanted into SiO 2 over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and Anderson impurity model calculations, we determine the strength of the covalent interaction between the interstitial ions and the SiO 2 valence band, finding it comparable to Mn and Co monoxides. Further, we find an increasing reduction in the SiO 2 electronic band gap for increasing implantation concentration, due primarily to the introduction of Mn-and Co-derived conduction band states. We also observe a strong increase in a band of x-ray stimulated luminescence at 2.75 eV after implantation, attributed to oxygen deficient centers formed during implantation.

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Structural ordering in a silica glass matrix under Mn ion implantation

Cited by 5 publications

References 33 publications

Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica

Interplay of ballistic and chemical effects in the formation of structural defects for Sn and Pb implanted silica

Preparation of Highly Transparent Silica Glass by SPS Sintering of SBA-15

Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO2

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