2014
DOI: 10.1016/j.spmi.2013.12.021
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Structural parameters, elastic properties and piezoelectric constants of wurtzite ZnS and ZnSe under pressure

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Cited by 46 publications
(17 citation statements)
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“…In addition, Table 3 compares the numerical values of the zone-center (Γ points) phonon frequencies of this work with earlier experimental and theoretical data of WZ ZnS. As seen in Table 3, the agreement with experiment is quite good, especially for A1 (TO), E1 (TO) and A2 (TO), E2 (TO) phonon modes and competing with recent GGA and LDA DFT data of Reference [14]. Further, we have focused on the ground state phonon density of states (PDOS) of WZ ZnS to clarify the contribution of the both elements (Zn and S) to the phonon properties of the compound.…”
Section: Resultssupporting
confidence: 71%
See 1 more Smart Citation
“…In addition, Table 3 compares the numerical values of the zone-center (Γ points) phonon frequencies of this work with earlier experimental and theoretical data of WZ ZnS. As seen in Table 3, the agreement with experiment is quite good, especially for A1 (TO), E1 (TO) and A2 (TO), E2 (TO) phonon modes and competing with recent GGA and LDA DFT data of Reference [14]. Further, we have focused on the ground state phonon density of states (PDOS) of WZ ZnS to clarify the contribution of the both elements (Zn and S) to the phonon properties of the compound.…”
Section: Resultssupporting
confidence: 71%
“…Recently, Yu et al [13] performed DFT calculations by using both the local density approximation (LDA) and GGA for the exchange-correlation potential and calculated the phonon dispersion curves and the phonon density of states of WZ ZnS in which the calculated values display good agreement with earlier experimental and theoretical data. In another recent study, Ferahtia et al [14] published the first-principles plane-wave-based pseudopotential method calculations of the structural, elastic, and piezoelectric parameters of WZ ZnS and concluded a reasonable degree of agreement between their results and data available in the literature.…”
Section: Introductionmentioning
confidence: 84%
“…]/[Zn 2? ]) varied in the range (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18) at.% with a step of 6 at.%.…”
Section: Experimental Details 21 Materialsmentioning
confidence: 99%
“…ZnS compound is a promoting candidate for a large variety of applications including photonic crystal sensors [3], optical filters [4], light-emitting diodes [5], anti-reflection coatings [6], electroluminescent devices [7], flat panel displays, phosphors [8] and photovoltaic cells [5]. Various synthetic methods have been employed to synthesize ZnS thin films, such as metal organic chemical vapor deposition (MOCVD) [9], sol-gel deposition [10], radio frequency (RF) magnetron sputtering [11], thermionic vacuum arc [12], molecular beam epitaxy (MBE) [13], pulsed laser deposition (PLD) [14], successive ionic layer adsorption and reaction (SILAR) [15] and chemical bath deposition (CBD) [16].…”
Section: Introductionmentioning
confidence: 99%
“…[ 3 ] When MoS 2 is the monolayer or other odd number of atomic layers, it will lose the inversion center of the crystal and become a piezoelectric semiconductor with a non‐central symmetric structure, similar to ZnO, [ 11 ] GaN, [ 12 ] InN, [ 13 ] and ZnS. [ 14 ] In contrast, the 3D and even‐numbered layers of MoS 2 do not have the piezoelectric properties due to their central symmetry. PL spectra can be utilized to reveal the behaviors of many‐body quasiparticles [ 15 ] formed by Coulomb interaction in different layers of MoS 2 , and the quasiparticles mainly include excitons and trions (charged excitons) which are one electron—one hole and two electrons—one hole, respectively.…”
Section: Introductionmentioning
confidence: 99%