2007
DOI: 10.1016/j.jcrysgro.2007.06.006
|View full text |Cite
|
Sign up to set email alerts
|

Structural phase control of CdSe thin films by metalorganic chemical vapor deposition

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
10
0

Year Published

2008
2008
2017
2017

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 27 publications
(11 citation statements)
references
References 20 publications
1
10
0
Order By: Relevance
“…The lower energy peak mainly originates from near-band-edge (NBE) emission of GaAs substrate due to the thin thickness (130-285 nm) of CdSe epilayers in this work, which is also supported by PL measurement of a bared n-GaAs substrate (not shown here). The higher energy peak at 1.665 eV is in good agreement with the bandgap of cubic CdSe (1.67 eV) at RT [5,10]. Therefore, it is ascribed to the NBE emission of zinc blende CdSe.…”
Section: Crystal Structure and Qualitysupporting
confidence: 74%
See 1 more Smart Citation
“…The lower energy peak mainly originates from near-band-edge (NBE) emission of GaAs substrate due to the thin thickness (130-285 nm) of CdSe epilayers in this work, which is also supported by PL measurement of a bared n-GaAs substrate (not shown here). The higher energy peak at 1.665 eV is in good agreement with the bandgap of cubic CdSe (1.67 eV) at RT [5,10]. Therefore, it is ascribed to the NBE emission of zinc blende CdSe.…”
Section: Crystal Structure and Qualitysupporting
confidence: 74%
“…Samarth et al [5] firstly reported the growth of cubic CdSe epilayers on GaAs(0 0 1) by molecular beam epitaxy (MBE). After that, several groups presented the structural and optical properties of zinc blende CdSe layers prepared by various techniques, including MBE [6][7][8], metalorganic chemical vapor deposition (MOCVD) [9,10], electron beam evaporation [11], closed space sublimation [12], and chemical bath deposition (CBD) [13]. Among these growth methods, MBE is thought to be one of the best processes of obtaining high-quality epitaxial films due to its ultrahigh vacuum (UHV) ambient and relatively slow growth rate.…”
Section: Introductionmentioning
confidence: 99%
“…All precursors may be in the gas phase, or one precursor may be present on the substrate to assist in nucleation. The development of this method is centered around semiconductor thin films. Once more, metal oxides and sensitizing semiconductors can be prepared following CVD processing, and recent work involves structural and morphological varieties of semiconductors that may boost future photoelectrochemical solar cell performance.…”
Section: Preparation Of Nanostructured Semiconductor Filmsmentioning
confidence: 99%
“…[3][4][5][6][7][8][9][10]. As it is well known that CdSe can be crystallized in zinc blende (cubic), wurtzite (hexagonal) or wurtzite-zinc blende mixed phases, the transformation in crystalline phases of CdSe has attracted much attention in the past [11]. Some researchers observed the phase transformation by annealing [12] or mechanically grinding CdSe samples [13].…”
Section: Introductionmentioning
confidence: 99%