Structural properties and enhanced bandgap tunability of quaternary CdZnOS epitaxial films grown by pulsed laser deposition

Zheng, Lilan; Lin, Yi‐Cheng; Li, Lei; Liang, Guojin; Li, Mingkai; Li, Pai; He, Yunbin

doi:10.1016/j.jallcom.2015.08.049

Cited by 11 publications

(1 citation statement)

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“…Considering that the Mg 2+ radius is slightly smaller than the Zn 2+ radius, while S 2− has a larger radius than O 2− , we proposed and demonstrated in a previous study that co-substituting Mg and S into ZnO can greatly increase the S solubility limit in single-phase MgZnOS quaternary alloys compared with the counterpart ternary ZnOS alloys, taking advantage of the compensation effect of the co-substituting ions [14]. Similar synergistic compensation effects of cation-anion co-substitution were also observed in other ZnO-based quaternary alloys such as CdZnOS and BeZnOS [15,16]. Moreover, the extended solid solubility of dopants was found to result in enhanced bandgap tunability of these quaternary alloys.…”

Section: Introductionsupporting

confidence: 56%

The S-content-dependent lattice structure evolution and bandgap modulation in quaternary MgZnOS alloy films

Cheng¹,

Li²,

Wang³

et al. 2020

J. Phys. D: Appl. Phys.

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Bandgap engineering of ZnO by alloy formation is of great importance for its application in modern optoelectronic devices. Herein, Mg and S co-substituted quaternary Mg0.12Zn0.88O1−y S y (MgZnOS) alloy films with various S content were grown on c-plane sapphire by pulsed laser deposition using a Mg0.12Zn0.88O0.18S0.82 ceramic target under various O2 partial pressures. The S-content-dependent phase structure evolution and S solubility limits in single-phase MgZnOS alloys were determined, and the correlation of lattice constants and band gap with the S content of the single-phase MgZnOS was quantitatively established. It turns out that the MgZnOS films grow quasi-epitaxially on c-sapphire with a wurtzite structure, which evolves intricately with varying S content. The S-rich MgZnOS films assume both lattice constants and in-plane orientation similar to those of ZnS. With decreasing S content, the alloy lattice first contracts along the out-of-plane direction, then shrinks in-plane, and partly re-orients by 30° in-plane, eventually approaching ZnO for the O-rich MgZnOS films. S content (y S) achieved in the single-phase O-rich and S-rich Mg0.12Zn0.88O1−y S y films is y S ⩽ 0.33 and y S ⩾ 0.67, respectively, far beyond the S solubility limits in the counterpart ternary ZnOS. While phase separation of MgZnO and MgZnS takes place in the films with S content between 0.34–0.65, in-plane domain separation with mutual rotation by 30° occurs in the O-rich single-phase MgZnOS films with y S ⩽ 0.08. Moreover, for the O-rich single-phase MgZnOS films, the lattice constant c expands linearly while a remains almost invariant with increasing S content. The band gap of MgZnOS is nonlinearly adjustable in the range of 3.13–3.66 eV, with a bowing parameter (∼1.89 eV) smaller than that of ZnOS (∼3.0 eV). The S-content-dependent evolutions of both lattice constants and band gap of MgZnOS differ distinctly from those of ZnOS, indicating bright prospects for synergistic Mg and S co-substitution in the effective modulation of both structure and band gap of ZnO to meet specific applications.

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Section: Introductionsupporting

confidence: 56%