Structural properties and preparation of Si-rich Si1−xCx thin films by radio-frequency magnetron sputtering

Continuous compositional spread investigation of SiC-based thin films prepared by MW-ECR plasma enhanced magnetron co-sputtering

“…It is clear that the carbon content increases linearly from 0.28 to 0.72 with the deposition position changed from 85 to The infrared absorption spectra of the Si x C y thin films with increasing carbon content y are shown in figure 3. The spectra exhibit one main absorption band centered around 790 cm −1 , which is assigned to vibrational modes of Si−C [8], while the weak band around 1400 cm −1 appeared when y value is larger than 0.49 might due to sp 2 C−C bonds [12,23].…”

“…Furthermore, magnetron sputtering technique can simplify the investigation of the relationship between the properties and compositions by depositing hydrogen-free Si x C y thin films. The compositions of hydrogen-free Si x C y thin films deposited by magnetron sputtering techniques can be changed by controlling the power of target, area ratio of silicon to graphite sections of a composite target and even the driving frequency of RF power supply [11][12][13][14][15][16][17]. In the present study, continuous compositional spread method, a kind of combinatorial material methodology, has been used to deposit Si x C y thin films with different compositions by controlling deposition position.…”

Control of growth and structure of Ag films by the driving frequency of magnetron sputtering

“…In the experiment, unbalanced magnetron sputtering driven by the RF (2, 13.56 and 27.12 MHz) and the VHF (40.68 and 60 MHz) sources was used to deposit the Ag films [18][19][20][21]. A water-cooled circular Ag target (99.99% pure, 50 mm in diameter) was placed at the top of a vacuum chamber.…”

“…Apart from the above methods, recent investigations of the plasma properties of RF and very-high-frequency (VHF) magnetron sputtering have shown that the energy and flux of ions impacting both the target and the substrate could be well adjusted by changing the driving frequency of sputtering [17,18]. Thus, the growth and structural properties of Si, C and Si 1−x C x films could be well controlled [19][20][21]. However, the effect of driving frequency on the growth and structure of Ag films is seldom reported.…”

Preparation and structural properties of thin carbon films by very-high-frequency magnetron sputtering

“…In the experiment, the a-C thin films were deposited on n-type (100) silicon wafers and NaCl wafers by an unbalanced planar magnetron sputtering. [12,14,15] The reactor was a cylindrical vacuum chamber made of stainless steel, had a diameter of 350 mm and a height of 300 mm, in which the circular 99.999% pure (5 N) carbon target with a diameter of 50 mm, mounted on the water-cooled copper surface, was placed at the top of the chamber, and the stainless steel substrate holder with a diameter of 100 mm was set at the bottom, about 70 mm away from the target surface. The wall of the reactor was electrically grounded, but the substrate holder was electrically floated.…”