Structural properties of cubic MnTe layers grown by MBE

Janik, E.; Dynowska, E.; Bąk‐Misiuk, J.; Leszczyński, M.; Szuszkiewicz, W.; Wójtowicz, T.; Karczewski, G.; Zakrzewski, A.; Kossut, J.

doi:10.1016/0040-6090(95)06632-2

Cited by 63 publications

(39 citation statements)

References 12 publications

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“…Its lattice parameter value a 0 = 6.338Å [9] is not far from values of several II-VI type semiconducting compounds (it matches rather well with them) so such MnTe is often applied as a constituent of II-VI quantum structures, also these used in spintronic experiments. However, bulk ZB MnTe crystals do not exist in nature because of the metastable character of this phase (the stable modification of this compound is hexagonal MnTe, crystallizing in NiAs-type structure) (for details see, e.g., [10]).…”

Section: Introductionmentioning

confidence: 99%

“…The growth of MnTe was realized in Te-rich conditions from elemental Mn and Te sources. Samples were grown in the Institute of Physics of the Polish Academy of Sciences in Warsaw (details of the growth were described elsewhere -see, e.g., [9,19]). After the growth samples were characterized by the X-ray diffraction (XRD) in order to perform the crystal phase analysis, to determine the period of every SLs etc.…”

Section: Brillouin Light Scattering Techniquementioning

confidence: 99%

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Elastic Properties of Zinc Blende MnTe

et al. 2004

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The Brillouin light scattering was used to investigate elastic properties of the zinc blende, MBE-grown MnTe layer that was deposited on a (001) GaAs substrate covered by CdTe buffer layer. The three elastic constants of the zinc blende MnTe, namely c 11 , c 12 , and c 44 , were directly determined for the first time from the frequency of the Rayleigh mode, of the pseudo--surface mode, and of the shear horizontal bulk mode traveling parallel to the layer surface. The value of c11 was checked using the frequency of longitudinal bulk waves propagating at different angles from the normal of the layer plane. This value was also independently determined by results of the folding of acoustic phonons, observed for MnTe/CdTe superlattices by the Raman scattering. Finally, the bulk modulus given by the formula B = (c11+2c12)/3 was determined for zinc blende MnTe by ab initio calculations making use of the density functional theory and atomic pseudopotentials; spin polarization of MnTe was taken into account. A satisfactory agreement between theoretical and experimental values was obtained.

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Section: Introductionmentioning

confidence: 99%

Section: Brillouin Light Scattering Techniquementioning

confidence: 99%

Elastic Properties of Zinc Blende MnTe

et al. 2004

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“…The lattice parameter value in the (Sn,Mn)Te solid solution decreases with an increase of Mn content but the mechanical properties of a hypothetical MnTe crystal with the rock-salt structure are not known. The MnTe crystallizes in the hexagonal structure of the NiAs type ( [13] and references therein), the metastable, zinc blende phase of this compound only can also be obtained by MBE (see, e.g., [14]). The observed qualitative composition dependence of the microhardness in (Sn,Mn)Te thin layers is similar to that observed in (Pb,Sn)Te bulk crystal [15] but differs significantly from that recently observed for several PbTe-based solid solutions containing Cd [16,17], Ge [18], or Ca [19].…”

Section: Resultsmentioning

confidence: 99%

Microhardness and the Young Modulus of Thin, MBE-Grown, (Sn,Mn)Te Layers Containing up to 8% of Mn

et al. 2017

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The thin layers of (Sn,Mn)Te solid solution were grown by molecular beam epitaxy onto (111)-oriented BaF2 substrates and characterized by scanning electron microscopy, atomic force microscopy, energy dispersive X-ray spectrometry, and X-ray diffraction methods. The epitaxial character of the growth was confirmed. All the layers exhibited a regular (fcc) structure of the rock-salt type and were (111)-oriented, their thickness was close to about 1 µm. The layers contained up to 8% of Mn. The microhardness and the Young modulus values were determined by the nanoindentation measurements. The Berkovich type of the intender was applied, the maximum applied load was equal to 1 mN. The results of measurements demonstrated a lack of the composition dependence of the Young modulus value. A slight increase of the microhardness value with an increasing Mn content in the (Sn,Mn)Te solid solution was observed.

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“…In majority of examined samples the main phase was cubic MnTe in the form of a single crystal layer with (111) crystallographic planes parallel to BaF2 (111) substrate. The interplanar spacing d, measured in (982) the growth direction, was evidently larger than the lattice parameter of cubic MnTe grown on GaAs(001) [1,6]. Detailed measurements of different interplanar spacing were made using Bond spectrometer with Bartels monochromator.…”

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MBE Growth and Characterization of Cubic MnTe(111) on BaF₂Substrates

et al. 1995

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We report on growth by molecular beam epitaxy of cubic MnTe (111) l a y e r s o n Β a F 2 ( 1 1 1 ) s u b s t r a t e s . L a y e r s a s t h i c k a s 0 . 2 -1 . 0 μ m w e r e g r o w n . B a s i c characterization by X-ray diffraction shows that the cubic crystal structure is deformed to orthorhombic symmetry.PACS numbers: 75.50. Pp, 68.55.Βd, 68.55.Jk Growth of cubic MnTe is -only possible by non-equilibrium techniques such as molecular beam epitaxy (MBE) [1][2][3][4]. Here, zinc-blende MnTe epilayers were grown by MBE in EΡI-620 system on (111) oriented BaF2. The bars of 5 x 5 or 15 x 15 mm2 were cleaved in 'order to provide slices of 0.5-1.0 mm thickness. Surfaces of such substrates had almost some of cleavage steps. The substrates were soldered to molybdenum blocks with gallium. MnTe epilayers were grown from Mn and Te sources, at Te rich conditions, either directly on the substrate or after a deposition of a very thin , (10-15 monolayers) CdTe buffer. The growth was monitored by in situ RHEED which showed diffraction streaks corresponding to a six-fold symmetry; no evidence of twinning was observed during all stages of the growth process. The growth was realized at about 300 or 4000C while changing the beam equivalent pressure (BEP) of Mn and Te fluxes in order to establish optimum growth conditions (BEP Te/Mn ratio was varied between 5 and 20). The layer thickness, determined by scanning electron microscopy, ranged from 0.4-1.1 μτμ, corresponding to the growth rate of about 0.2 μm/h.MnTe layers deposited on (111)-oriented BaF2 were characterized by (a) Nomarski contrast microscopy, (b) scanning electron microscopy, (c) X-ray analysis and (d) optical transmission measurements at 12 and 300 K.In the first stage of X-ray diffraction studies we determined the crystal phase composition of the layers using a conventional powder diffractometer. In all inves-' tigated layers three crystallographic phases were detected: hexagonal MnTe, cubic MnTe and traces of cubic MnΤe2. The relative abundance of hexagonal to cubic MnTe changes from sample to sample without any evident correlation to the growth parameters (Tsubst , BEP). In majority of examined samples the main phase was cubic MnTe in the form of a single crystal layer with (111) crystallographic planes parallel to BaF2 (111) substrate. The interplanar spacing d, measured in (982)

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Structural properties of cubic MnTe layers grown by MBE

Cited by 63 publications

References 12 publications

Elastic Properties of Zinc Blende MnTe

Elastic Properties of Zinc Blende MnTe

Microhardness and the Young Modulus of Thin, MBE-Grown, (Sn,Mn)Te Layers Containing up to 8% of Mn

MBE Growth and Characterization of Cubic MnTe(111) on BaF₂Substrates

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Structural properties of cubic MnTe layers grown by MBE

Cited by 63 publications

References 12 publications

Elastic Properties of Zinc Blende MnTe

Elastic Properties of Zinc Blende MnTe

Microhardness and the Young Modulus of Thin, MBE-Grown, (Sn,Mn)Te Layers Containing up to 8% of Mn

MBE Growth and Characterization of Cubic MnTe(111) on BaF2Substrates

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MBE Growth and Characterization of Cubic MnTe(111) on BaF₂Substrates