2015
DOI: 10.1016/j.jallcom.2014.11.057
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Structural properties of thermoelectric CoSb3 skutterudite thin films prepared by molecular beam deposition

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Cited by 26 publications
(35 citation statements)
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“…A mean grain size of 1.3 µm could be extracted from these images. This value is in the same range as the grain size found for annealed CoSb 3 thin films 8 .…”
Section: (B)supporting
confidence: 78%
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“…A mean grain size of 1.3 µm could be extracted from these images. This value is in the same range as the grain size found for annealed CoSb 3 thin films 8 .…”
Section: (B)supporting
confidence: 78%
“…This effect becomes stronger for Sb rich samples and can be attributed mainly to better crystallinity by less Sb interstitials and Sb evaporation resulting in a relaxation towards the smaller equilibrium lattice constant of stoichiometic FeSb 3 films as also observed for Sb rich CoSb 3 films 8,31 . Thus this equilibrium lattice constant a (neglecting stress) can be determined from XRD measurements of single phase FeSb 3 films with (nearly) stoichiometric Sb content after annealing at 300 • C. Therefore a XRD (θ/2Θ) scan of an annealed FeSb 3 film with a Sb content of 76 at.% was analyzed by performing a Rietveld refinement shown in fig.…”
Section: Structural Properties Of Fe-sb Thin Filmsmentioning
confidence: 60%
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“…Details of the preparation process can be found elsewhere [16]. The asdeposited films are amorphous, thus the wafer samples were broken in several pieces and postannealed in ultra-high vacuum (UHV) to achieve crystalline skutterudite films.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…For instance, frequently performed heating cycles and rapid temperature changes around the typical working temperatures can result in strain, thermal fatigue, and cracks, as well as compositional changes or even decomposition, which in turn will lower the ZT values. In a previous study, we have shown that an excess of Sb is necessary for the preparation of single phase CoSb 3 skutterudite thin films by molecular beam epitaxy (MBE) at room temperature followed by postannealing [16]. One major difficulty in the preparation of these films is the evaporation of Sb from the film sample during the annealing process, which will change the charge carrier concentration and thus the thermoelectric transport coefficients.…”
Section: Introductionmentioning
confidence: 99%