2020
DOI: 10.1590/s1517-707620200001.0911
|View full text |Cite
|
Sign up to set email alerts
|

Structural quality in single crystalline CdSe ingots grown by PVT

Abstract: CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a high stopping power for nuclear radiation. Single crystalline CdSe ingots were grown by Physical Vapor Transport (PVT) employing a horizontal reactor. As devices critically depend on material properties its single crystalline quality was determined by chemical etching and transmission electron microscopy. Results were compared to those corresponding to Bridgman High Pressure (HPB) grown material and also to PVT mat… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 19 publications
(24 reference statements)
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?