Structural, Raman spectroscopic and microwave dielectric studies on high-Q materials in Ge-doped ZnTiNb2O8 systems

Luo, Weijia; Li, Lingxia; Yu, Shihui; Sun, Zheng; Zhang, Bowen; Xia, F.

doi:10.1016/j.jallcom.2018.01.233

Cited by 30 publications

(17 citation statements)

References 37 publications

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“…Liao et al reported that the Raman vibration of the bond that has a strong interaction between ions was closely related to the microwave dielectric properties of ceramics. 45 The stronger Raman-active vibration modes located at 953 and 974 cm −1 (shown in Figure 9B) correspond to B-O bond vibration, indicating that there is a strong interaction between B 3+ and O 2− , 46 which is consistent with the calculation results from complex chemical bond theory. To discuss the relationship between B-O bond vibrations and microwave dielectric properties of Zn 3-x Li 2x (BO 3 ) 2 ceramics, Raman spectra were deconvoluted and presented in Figure 9C.…”

Section: Raman and Ft-ir Spectra Investigationssupporting

confidence: 83%

Bond characteristics and microwave dielectric properties of high‐Q materials in li‐doped Zn₃B₂O₆ systems

et al. 2021

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The bond characteristics, Raman spectroscopy, and microwave dielectric properties of Zn3‐xLi2x(BO3)2 ceramics prepared by solid‐state reaction method were investigated. According to the complex chemical bond theory, the bond ionicity and lattice energy of the B–O bond were proved to contributed more to the electric polarization and phase structure stability than that of A‐site bond. Thus, the B–O bond had a dominant effect on the dielectric constant and Q × f values. The optimization of the τf value can be attributed to the bond valence. Moreover, the shift and full width at half maximum of the Raman peak were closely related to the dielectric constant and Q × f values, respectively. On the whole, Li+ substitution contributed greatly to improve the temperature stability and reducing the dielectric loss of Zn3‐xLi2x(BO3)2 ceramics. Additionally, Zn2.99Li0.02(BO3)2 ceramics sintered at 850 °C exhibited satisfactory microwave dielectric properties of εr=6.59, Q × f=122,030 GHz, τf=−76.9 ppm/°C, and had good chemical compatibility with silver.

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Section: Raman and Ft-ir Spectra Investigationssupporting

confidence: 83%

Bond characteristics and microwave dielectric properties of high‐Q materials in li‐doped Zn₃B₂O₆ systems

et al. 2021

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“…Quality factor is an important index to evaluate the loss of ceramics, and the dielectric loss can be classified into two types: one is intrinsic loss, which is mainly controlled by the lattice vibration mode, and other is non‐intrinsic loss, which is mainly influenced by the combination of second phase, oxygen vacancies, grain size, and compactness 24,25 . The linear fitted curve of Q × ƒ values for (Co x Zn 1– x )TiNb 2 O 8 ceramics is illustrated in Figure 5B.…”

Section: Resultsmentioning

confidence: 99%

Crystal structure and microwave dielectric properties of temperature stable (Co_xZn_1–_x)TiNb₂O₈ ceramics

et al. 2023

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Co x Zn 1-x )TiNb 2 O 8 (x = 0.2-0.8) microwave dielectric ceramics were synthesized via the conventional solid-state reaction route, and the correlation of microwave dielectric properties on the crystal structure was discussed. Crystal structures of ceramic samples were systematically investigated by X-ray powder diffraction. Moreover, composition-induced phase transitions were confirmed via the following sequence: for x ≤ 0.2, single-phase orthorhombic ixiolite (ZnTiNb 2 O 8 ) was formed, whereas for 0.3 ≤ x<0.8, ixiolite and rutile coexisted.When x ≥ 0.8, only single-phase rutile was detected. For the (Co x Zn 1-x )TiNb 2 O 8 ceramics, the microwave dielectric properties were changed with the crystal structural transitions: the dielectric constant (ε r ) and the temperature coefficient of resonant frequency (τ f ) increased upon increasing the Co 2+ , but the quality factor (Q) decreased. A near-zero τ f = +1.6 ppm/ • C was obtained in the Co 0.38 Zn 0.62 TiNb 2 O 8 ceramics with ε r = 40.7 and high Q × f = 16 790 GHz. These research outcomes are expected to have great significance for developing microwave dielectric ceramics in practical applications.

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“…(The size of the spheres in the diagram represents the value of the dielectric constant; the larger the sphere, the higher the dielectric constant of the dielectric ceramic. ) 4,19–20,33,41,54–85 …”

Section: Resultsmentioning

confidence: 99%

Enhanced high dielectric characteristics tri‐layered structural ceramics for 5G/6G communications

et al. 2022

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Tri-layered structural Zn 0.997 Cu 0.003 ZrNb 2 O 8 -TiO 2 +ZnO/TiO 2 +CuO/TiO 2 -Zn 0.997 Cu 0.003 ZrNb 2 O 8 ceramics with different mass fractions of TiO 2 +ZnO/TiO 2 +CuO/TiO 2 were successfully prepared. The advantages of the multilayered design were completely demonstrated, and the microwave dielectric characteristics were modified by the components of each dielectric layer. In comparison to the random distribution-type, Zn 0.997 Cu 0.003 ZrNb 2 O 8 @TiO 2 +ZnO, this tri-layered construction could increase the Q × f value by approximately 100%. Meanwhile, based on the electronic compensation mechanisms, the Q × f value of the tri-layered structural ceramics with TiO 2 -doped interlayer can be increased by nearly 20% compared with that of the pure TiO 2 interlayer. The Zn 0.997 Cu 0.003 ZrNb 2 O 8 -TiO 2 +ZnO-Zn 0.997 Cu 0.003 ZrNb 2 O 8 tri-layered ceramic exhibited excellent dielectric characteristics (𝜀 𝑟 = 33.75, Q × f = 59 000 GHz, and 𝜏 𝑓 = +2.27 ppm/ • C) with 0.05 wt% TiO 2 +ZnO sintered at 1240 • C for 6 h, and the integrated optimization of microwave dielectric characteristics was achieved. This article provides a strategy for the synthesis of high-performance microwave dielectric components for application in 5G/6G wireless communication technologies.

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Structural, Raman spectroscopic and microwave dielectric studies on high-Q materials in Ge-doped ZnTiNb2O8 systems

Cited by 30 publications

References 37 publications

Bond characteristics and microwave dielectric properties of high‐Q materials in li‐doped Zn₃B₂O₆ systems

Bond characteristics and microwave dielectric properties of high‐Q materials in li‐doped Zn₃B₂O₆ systems

Crystal structure and microwave dielectric properties of temperature stable (Co_xZn_1–_x)TiNb₂O₈ ceramics

Enhanced high dielectric characteristics tri‐layered structural ceramics for 5G/6G communications

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Structural, Raman spectroscopic and microwave dielectric studies on high-Q materials in Ge-doped ZnTiNb2O8 systems

Cited by 30 publications

References 37 publications

Bond characteristics and microwave dielectric properties of high‐Q materials in li‐doped Zn3B2O6 systems

Bond characteristics and microwave dielectric properties of high‐Q materials in li‐doped Zn3B2O6 systems

Crystal structure and microwave dielectric properties of temperature stable (CoxZn1–x)TiNb2O8 ceramics

Enhanced high dielectric characteristics tri‐layered structural ceramics for 5G/6G communications

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Bond characteristics and microwave dielectric properties of high‐Q materials in li‐doped Zn₃B₂O₆ systems

Bond characteristics and microwave dielectric properties of high‐Q materials in li‐doped Zn₃B₂O₆ systems

Crystal structure and microwave dielectric properties of temperature stable (Co_xZn_1–_x)TiNb₂O₈ ceramics