The two-dimensional multi-layered molybdenum disulfide (MoS 2 ) was grown over a large area by chemical vapor deposition process for violet ($405 nm) photodetector (PD) applications. The high-quality MoS 2 layers were successfully fabricated and transferred on HfO 2 /Si substrate. The inherent surface structure originated from the surface oxidation was also analyzed. The electrical properties of the multi-layered MoS 2 -based violet PDs with various channel widths (W ch ) were measured and compared under dark state and violet illumination operating at 405 nm. For the device with W ch of 4 mm, at the bias of À5 V, the photocurrent and on/off ratio were obtained to be 54.0 nA and 55.2, respectively. Under violet illumination, the photocurrent was $4.6 times higher compared to green illumination. At the bias of À5 V, the photoresponse properties of the device were characterized with average rise time and reset time of $55.7 and 46.0 s, respectively, during 4 cycles of operation.