“…The X-ray photoelectron spectroscopic studies were performed to analyze the compositional properties of the nc-SiO x C y :H films. Figure a shows the XPS spectra of the film deposited at T S = 180 °C, which exhibits three notable peaks at 98, 149, 283.6, and 531 eV, corresponding to the Si 2p, Si 2s, C 1s, and O 1s states, respectively. , The presence of these peaks confirms the creation of the silicon oxy-carbide network. Figure b shows the Si 2p core-level spectrum deconvoluted into four satellite components, which are related to the Si–Si, Si–C, Si–O–C, and Si–O components with binding energies of 98.9, 99.9, 102.1, and 103.2 eV, respectively. , Within the intrinsic structural network of nc-SiO x C y :H formed at T S = 180 °C, ∼10.5% of the Si–C component was obtained, along with Si–O ∼10.5%, Si–C–O ∼24.5%, and Si–Si ∼54.5%.…”