Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

Sacilotti, M.; Décobert, J.; Sik, H.; Post, G.; Dumas, C.; Viste, Pierre; Patriarche, G.

doi:10.1016/j.jcrysgro.2004.08.114

Cited by 11 publications

(21 citation statements)

References 16 publications

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“…Demonstrated by Wagner and Ellis's work and followed by many other 3D-S growers such as Givargizov, Lieber, Samuelson, and Buhro, the Vapor-liquid-solid mechanism is briefly described below. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] Although this paper focuses on VLS and vapor-solid-solid ͑VSS͒ mechanisms, it is worthwhile to mention that there exist other possibilities. Carbon tubes have been grown without metallic cluster but with ferrocene as catalyst.…”

Section: The Model Of the Vls "Sls Vss Etc… Mechanismmentioning

confidence: 99%

“…3͑b͒, the substrate is bare, no metal acting as a catalyst being present as in the VLS model; the 3D structure looks like a montgolfier or balloon so ͑a͒ and ͑b͒ are called "montgolfiers." [9][10][11]40 In Fig. 3͑c͒, the substrate is aluminum film/silicon; here also, no metallic cluster is acting as a catalyst; it shows scepterlike structures deposited by MOCVD on aluminum stripes.…”

Section: Some 3d Structures Grown By Mocvd With Organometallic Mmentioning

confidence: 99%

“…7,8 "Self-catalysts" have been also reported to grow 3D-S by using organometallic compounds that interact with many kinds of metallic, semiconductor, and insulating materials. [9][10][11] One clearly sees that 3D shaped structures will be different according to the method of their fabrication, and that different applications can result from such diversities of structures.…”

Section: Introductionmentioning

confidence: 99%

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Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials

Cheyssac

Sacilotti

Patriarche

2006

Journal of Applied Physics

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International audienceThe growth mechanism model of a nanoscaled material is a critical step that has to be refined for a better understanding of a nanostructure's dot/wire fabrication. To do so, the growth mechanism will be discussed in this paper and the influence of the size of the metallic nanocluster starting point, referred to later as “size effect,” will be studied. Among many of the so-called size effects, a tremendous decrease of the melting point of the metallic nanocluster changes the physical properties as well as the physical/mechanical interactions inside the growing structure composed of a metallic dot on top of a column. The thermodynamic size effect is related to the bending or curvature of chains of atoms, giving rise to the weakening of bonds between them; this size or curvature effect is described and approached to crystal nanodot/wire growth. We will describe this effect as that of a “cooking machine” when the number of atoms decreases from 1023 at./cm3 for a bulk material to a few tens of them in a 1–2 nm diameter sphere. The decrease of the number of atoms in a metallic cluster from such an enormous quantity is accompanied by a lowering of the melting temperature that extends from 200 up to 1000 K, depending on the metallic material and its size under study. In this respect, the vapor-liquid-solid VLS model, which is the most utilized growth mechanism for quantum nanowires and nanodots, is critically exposed to size or curvature effects CEs. More precisely, interactions in the vicinity of the growth regions should be reexamined. Some results illustrating the growth of micrometer-/nanometer-sized materials are presented in order to corroborate the CE/VLS models utilized by many research groups in today's nanosciences world. Examples of metallic clusters and semiconducting wires will be presented. The results and comments presented in this paper can be seen as a challenge to be overcome. From them, we expect that in a near future an improved model can be exposed to the scientific communit

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Section: The Model Of the Vls "Sls Vss Etc… Mechanismmentioning

confidence: 99%

Section: Some 3d Structures Grown By Mocvd With Organometallic Mmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials

Cheyssac

Sacilotti

Patriarche

2006

Journal of Applied Physics

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“…Most techniques of nanomaterials synthesis are a combination of chemical and physical methods, such as CVD (chemical vapor deposition) or MOCVD (metal organic chemical vapor deposition) [17][18][19][20][21][22][23][24][25]. In CVD, a precursor, often diluted in a carrier gas or gasses, is delivered into a reaction chamber at approximately ambient temperatures.…”

Section: Synthesis Of Semiconductor Nanomaterialsmentioning

confidence: 99%

Optical and Dynamic Properties of Undoped and Doped Semiconductor Nanostructures

Grant¹,

Zhang²

2008

Annual Review of Nano Research

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This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials.Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties.Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.2

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“…Recently, our research group proposed the growth and nitridation of novel three-dimensional structures. This paper presents an alternative method based on the metal-organic chemical vapor deposition (MOCVD) growth technique to obtain micro/nanometallic or semiconducting structures [3][4][5][6][7]. Each of the 3D gallium structures will have different morphologies, depending on the growth conditions and particularly on the growth temperature.…”

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence and structural studies of nitrided 3D gallium structures grown by MOCVD

Chiaramonte

Romero

Fabreguette

et al. 2009

Journal of Luminescence

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Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

Cited by 11 publications

References 16 publications

Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials

Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials

Optical and Dynamic Properties of Undoped and Doped Semiconductor Nanostructures

Cathodoluminescence and structural studies of nitrided 3D gallium structures grown by MOCVD

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