Structural studies of thin silicon layers repeatedly implanted by carbon ions

Нусупов, К.Х.; Бейсенханов, Н. Б.; Valitova, Irina; Dmitrieva, Evgenia; Zhumagaliuly, D.; Shilenko, E. A.

doi:10.1134/s1063783406070079

Cited by 10 publications

(3 citation statements)

References 16 publications

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“…Acceptable CVD-process is characterized by temperatures higher than 1000 °C, in particular, for the evaporation of powders. There are studies of the polyenergetic ion synthesis [33] of SiC-layers with certain stoichiometry which show that the minimum temperature of Si-C bonds formation is about 700°C.…”

Section: Cvd Sic-film: Procedures and Propertiesmentioning

confidence: 99%

“…Detected metallization and/or hydrogen passivation [33] of SiCsurface is of particular interest, so it can be used for field emission (and the hydrogen bonds are stable with respect to oxygen). Achievement of sufficient surface conductivity of SiC-structures directly influences on pre-exponential factor in Fowler-Nordheim equation.…”

Section: Field Emission From Nanosized Sicmentioning

confidence: 99%

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The ways of silicon carbide usage in field-emission devices: The technological aspect

Shelepin¹,

Matyushkin²,

Orlov³

et al. 2013

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)

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Section: Cvd Sic-film: Procedures and Propertiesmentioning

confidence: 99%

Section: Field Emission From Nanosized Sicmentioning

confidence: 99%

The ways of silicon carbide usage in field-emission devices: The technological aspect

Shelepin¹,

Matyushkin²,

Orlov³

et al. 2013

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)

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“…Both metallic particles [16,17] and non-metallic ions are used as doping additives. Of the non-metals, fluorine ions are prevalent [18][19][20][21][22][23]. The bandgap is reduced and the oxidation potential of holes is improved by doping the material with fluorine atoms [24,25].…”

Section: Introductionmentioning

confidence: 99%

The Influence of Lyophobicity and Lyophilicity of Film-Forming Systems on the Properties of Tin Oxide Films

Dmitriyeva,

Lebedev,

Bondar

et al. 2023

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In this work, the effects of lyophobicity and lyophilicity of film-forming systems on the properties of thin nanostructured films was studied. Systematic series of experiments were carried out with lyophilic film-forming systems: SnCl4/EtOH, SnCl4/EtOH/NH4F, SnCl4/EtOH/NH4OH and lyophobic systems: SnO2/EtOH and SnO2/EtOH/NH4F. Film growth mechanisms are determined depending on the type of film-forming system. The surface of the films was studied using a scanning electron microscope and an optical microscope. The spectrophotometric method is used to study the transmission spectra and the extinction coefficient. The surface resistance of the films was determined using the four-probe method. The quality factor and specific conductivity of the films are calculated. It was found that the addition of a fluorinating agent (NH4F) to a film-forming system containing SnO2 in the form of a dispersed phase does not lead to an increase in the specific conductivity of the films. X-ray diffraction analysis proved the incorporation of fluorine ions into the structure of the film obtained from the SnCl4/EtOH/NH4F system by the presence of SnOF2 peaks. In films obtained from SnO2/EtOH/NH4F systems, there are no SnOF2 peaks. In this case, ammonium fluoride crystallizes as a separate phase and decomposes into volatile compounds.

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