Structural study of GaSb/AlSb strained-layer superlattice

Ck, Pan; Dc, Zheng; Finstad, T. G.; Wk, Chu; Vs, Speriosu; Ma, Nicolet; Jh, Barrett

doi:10.1103/physrevb.31.1270

Cited by 50 publications

(7 citation statements)

References 19 publications

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“…This resonance angular method of determining strain in SLS is more sensitive at low strains that the axialchanneling angular-scan techniques. 3,4 In conclusion we have observed at resonance a shift in the characteristic dechanneling depth with an incident angle that exhibits a strongly symmetric and catastrophic character. We have described this new type of channeling behavior with a theoretical, phase-plane analysis and find good agreement with the experiment.…”

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confidence: 57%

Incident-Angle Dependence of Catastrophic Dechanneling for Strained-Layer Superlattices

et al. 1985

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A strong asymmetry has been observed in the angular dependence of t)ie catastrophic dechanneling depth in strained-layer superlattices. This new effect occurs under resonance conditions, where the wavelength of the planar-channeled particles equals the peritfci of the superlattice, and is demonstrated for {110} planar channeling in GaP/GaAs x Pi_ x . A theoretical, phase-plane analysis shows that the angular tilt required for shifting of the catastrophic depth by one layer is a direct measure of the strain in the first few layers.

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confidence: 57%

Incident-Angle Dependence of Catastrophic Dechanneling for Strained-Layer Superlattices

et al. 1985

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“…Extrapolating this linear behaviour shows that when the AlInGaN film is 850-nm thick, then e T = 0, which means that the film is fully relaxed. [26] The angular scan information obtained in the deep layer is filtered by the top layer. The real lattice strain should be larger than that measured by angular shift.…”

Section: Resultsmentioning

confidence: 99%

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

Husnain

Chen

et al. 2010

Chinese Phys. B

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A 240-nm thick Al 0.4 In 0.02 Ga 0.58 N layer is grown by metal organic chemical vapour deposition, with an over 1-µm thick GaN layer used as a buffer layer on a substrate of sapphire (0001). Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN. The results show a good crystalline quality of AlInGaN (χ min = 1.5%) with GaN buffer layer. The channeling angular scan around an off-normal ⟨1 213⟩ axis in the {10 10} plane of the AlInGaN layer is used to determine tetragonal distortion e T , which is caused by the elastic strain in the AlInGaN. The resulting AlInGaN is subjected to an elastic strain at interfacial layer, and the strain decreases gradually towards the near-surface layer. It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed (e T = 0).

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“…Chu et al (1983) and Pan et al (1985) have shown such a study on GaSb-AlSb superlattices. Chu et al (1983) and Pan et al (1985) have shown such a study on GaSb-AlSb superlattices.…”

Section: B Strain Analysis By Channeling Angular Scansmentioning

confidence: 95%

“…Fig. 25 Pan et al, 1985. The oscillations seen in the scattering yield in the spectra are due to the variation in composition with depth.…”

Section: B Strain Analysis By Channeling Angular Scansmentioning

confidence: 99%

Rutherford Backscattering Spectrometry on Thin Solid Films

Finstad

Chu

1988

Treatise on Materials Science &Amp; Technology

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Structural study of GaSb/AlSb strained-layer superlattice

Cited by 50 publications

References 19 publications

Incident-Angle Dependence of Catastrophic Dechanneling for Strained-Layer Superlattices

Incident-Angle Dependence of Catastrophic Dechanneling for Strained-Layer Superlattices

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

Rutherford Backscattering Spectrometry on Thin Solid Films

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