The electronic structures of several Pu-115 compounds are investigated computationally, using ab initio density-functional-theory based calculations. We focus here on aspects related to the modification of the transition metal element (M ) in the PuM Ga5 compounds, considering specifically PuFeGa5, PuCoGa5 and PuNiGa5. Our calculations show that a peculiarity of the Pu-115 compounds is the energy position of the transition-metal d-states, which are retracted mainly from the Fermi energy, while Pu 5f states are located at and in the vicinity of the Fermi energy. As a consequence, modifications of the transition metal element, as in the series PuFeGa5, PuCoGa5 and PuNiGa5, lead to hole or electron doping, respectively, on the Pu site. The narrow band of 5f states at the Fermi level is thus sensitively modified through the 5f band filling, and hence, qualitatively different Fermi surfaces result.