Structurally Induced Optical Transitions in Ge-Si Superlattices

Analytic bond-order potentials for modelling the growth of semiconductor thin films

“…8. It can be seen that increasing the temperature results in an improvement of the film crystallinity, in good agreement with experiments [77][78][79]. BOP-based molecular dynamics simulations therefore provide a valuable tool to explore the detailed atomic assembly mechanisms during the growth of Si films.…”

Spin dynamics in semiconductors

“…107 and 108. The advantage of the strained SiGe quantum well over bulk silicon is the appearance of the direct optical transition through the so called non-phonon transition [1063][1064][1065]. Due to the non-phonon transition and its phonon replica [1065], radiative recombination in a SiGe quantum well is much faster than that in silicon.…”

Bands and Bandgaps in Solids

“…There are an infinite number of such pseudo-compounds, which provides the possibility of creating any desired bandgap energy. For quaternary alloys such as Ga x Al l-x P y As l-y , see Pearsall (1982). The conventional term alloy of metals also encompasses crystallite mixtures of nonintersoluble metals, such as lead and tin (solder).…”

“…However, electrons are confined in AlAs for 3 < n < 10; only for n > 10 are electrons also confined in GaAs, as is expected for thicker superlattices with near-bulk gap properties for each layersee also (Kamimura and Nakayama 1987). For Si n Ge m ultrathin superlattices, see Pearsall et al (1987) and Froyen et al (1987).…”