Journal of Crystal Growth

2009

DOI: 10.1016/j.jcrysgro.2009.01.081

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Structure analysis of GaAs nanocrystals with anisotropic basal plane grown on Si(1 0 0) surface

¹

,

²

,

Hidehiro Yasuda

³

et al.

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“…격자부정합인 두 물질을 결합시키는 heteroepitaxy 는 각종의 새로운 기능을 가진 소자를 실현할 수 있다는 가능성으로 인하여 광범위하게 연구되어지 고 있다 [1][2][3] . 이중 대표적인 구조가 Si 위에 GaAs를 결합시키는 것이다.…”

Section: 서 론unclassified

GaAs Epilayer Growth on Si(100) Substrates Cleaned by As/Ga Beam and Its RHEED Patterns

Yim¹,

Kim²,

³

2010

Journal of the Korean institute of surface engineering

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The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with different surface cleaning method of vacuum heating, As-beam, and Ga-beam at the substrate temperature of 800 o C. Growth temperature and thickness of the GaAs epitaxial layer were 800 o C and 1 µm, respectively. The surface structure and epitaxial growth were observed by reflection high-energy electron diffraction(RHEED) and scanning electron microscope(SEM). Just surface structure of the Si(100) substrate cleaned by Ga-beam at 800 o C shows double domain (2 × 1). RHEED patterns of the GaAs epitaxial layers grown on Si(100) substrates with cleaning method of vacuum heating, As-beam, and Ga-beam show spot-like, (2 × 4) with spot, and clear (2 × 4). From SEM, it is found that the GaAs epitaxial layers grown on Si(100) substrates with Ga-beam cleaning has a high quality.

“…격자부정합인 두 물질을 결합시키는 heteroepitaxy 는 각종의 새로운 기능을 가진 소자를 실현할 수 있다는 가능성으로 인하여 광범위하게 연구되어지 고 있다 [1][2][3] . 이중 대표적인 구조가 Si 위에 GaAs를 결합시키는 것이다.…”

Section: 서 론unclassified

GaAs Epilayer Growth on Si(100) Substrates Cleaned by As/Ga Beam and Its RHEED Patterns

Yim¹,

Kim²,

³

2010

Journal of the Korean institute of surface engineering

View full text Add to dashboard Cite

The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with different surface cleaning method of vacuum heating, As-beam, and Ga-beam at the substrate temperature of 800 o C. Growth temperature and thickness of the GaAs epitaxial layer were 800 o C and 1 µm, respectively. The surface structure and epitaxial growth were observed by reflection high-energy electron diffraction(RHEED) and scanning electron microscope(SEM). Just surface structure of the Si(100) substrate cleaned by Ga-beam at 800 o C shows double domain (2 × 1). RHEED patterns of the GaAs epitaxial layers grown on Si(100) substrates with cleaning method of vacuum heating, As-beam, and Ga-beam show spot-like, (2 × 4) with spot, and clear (2 × 4). From SEM, it is found that the GaAs epitaxial layers grown on Si(100) substrates with Ga-beam cleaning has a high quality.

Synthesis and Characterization of Nanocrystals and Nanoparticles

Liu¹

2016

Semiconductor Nanocrystals and Metal Nanoparticles

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