Structure analysis of self‐assembled ErSi₂ nanowires formed on Si (110) substrates

Abstract

SUMMARYThe ErSi 2 nanowires were formed on Si(110) substrates by a self-assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1-10] direction. It was shown by structural analysis that the nanowires consisted of two types, which displayed a similar surface morphology. The first type is ErSi 2 nanowires buried into the Si substrate at a depth of 30 mm, and the other is ErSi 2 thin layers covering a wire-like Si surface. The latter is suggested to be the remaining structure after evaporation of the first type wires during high-temperature annealing.