Structure and chemistry investigations of Ni3InAs thin film on InAs substrate

Patout, L.; Rabhi, S.; Perrin-Pellegrino, Carine; Charaı̈, A.; Hoummada, K.

doi:10.1016/j.intermet.2020.106901

Cited by 1 publication

(2 citation statements)

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“…When the Ni film is completely consumed for the 20- and 100-nm-thick samples ( Figure 3 a,b) or blocked for the 500-nm-thick sample ( Figure 3 c), the system evolves towards a single equilibrium between Ni 3 GaAs and GaAs, resulting in the homogenization of the Ni 3 GaAs composition [ 28 ]. This homogenization induces a change of composition, and as a result, a shift of the diffraction peaks towards high angles [ 27 , 49 ].…”

Section: Discussionmentioning

confidence: 99%

“…In this work, we chose the Ni/GaAs metal-semiconductor system to understand the different phenomena that may occur upon the various fabrication processes since the GaAs substrates are similar to InGaAs processes due to the complete miscibility of In and Ga in the zinc-blende structure [ 24 , 25 ]. This is why the understanding of phenomena involved in both Ni/GaAs [ 26 ] and Ni/InAs [ 27 ] solid-state reactions is crucial for the fabrication and development of components for optoelectronics, photovoltaics, and microelectronics based on III-V semiconductors.…”

Section: Introductionmentioning

confidence: 99%

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Thickness Effect on the Solid-State Reaction of a Ni/GaAs System

et al. 2022

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Ni thin films with different thicknesses were grown on a GaAs substrate using the magnetron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness dependence on the formation of the intermetallic phases was investigated using in situ and ex situ XRD, pole figures, and atom probe tomography (APT). The results indicate that the 20 nm-thick Ni film exhibits an epitaxial relation with the GaAs substrate, which is (001) Ni//(001) GaAs and [111] Ni//[110] GaAs after deposition. Increasing the film’s thickness results in a change of the Ni film’s texture. This difference has an impact on the formation temperature of Ni3GaAs. This temperature decreases simultaneously with the thickness increase. This is due to the coherent/incoherent nature of the initial Ni/GaAs interface. The Ni3GaAs phase decomposes into the binary and ternary compounds xNiAs and Ni3−xGaAs1−x at about 400 °C. Similarly to Ni3GaAs, the decomposition temperature of the second phase also depends on the initial thickness of the Ni layer.

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Section: Discussionmentioning

confidence: 99%