Structure and chemistry of CuInSe2 for solar cell technology: current understanding and recommendations

Characteristics of Cu(In,Ga)Se2 (CIGS) thin films deposited by a direct solution coating process

“…The grain size was significantly influenced by Cu/III ratio, in which the higher was the Cu/III ratio the larger was the grain size. This is consistent with well-known effects of Cu-Se binary phase on the grain growth of CIGS films [25][26][27]. The Cu-Se phase is clearly seen in the XRD patterns of the films with Cu/III ratios over 1.17 ( Fig.…”

Characterization of CuIn(Ga)Se2 Thin Films

“…Two activation energies of (40 AE 20) and (20 AE 10) meV can be determined dent of the band gap. Inhomogeneous distributions of Ga in CuIn(Ga)Se 2 layers were reported previously [8] and were also found by secondary ion mass spectroscopy (SIMS) measurements on the present samples. The Ga concentration is such that it is lowest close to the surface of the samples and highest on the substrate side.…”

CuInSe2 solar cells by sequential absorber layer processing

“…Unfortunately, without gallium one loses its beneficial properties such as the decrease of the reaction velocity of copper and indium into their selenides [11] and its segregation at molybdenum back contact [12]. Primarily, this leads to adherence problems between the growing CuInSe 2 thinfilm and the molybdenum back contact during the annealing step.…”