Search citation statements
Paper Sections
Citation Types
Year Published
Publication Types
Relationship
Authors
Journals
With the growing need for extensive data storage, enhancing the storage density of nonvolatile memory technologies presents a significant challenge for commercial applications. This study explores the use of monatomic antimony (Sb) in multi-level phase-change storage, leveraging its thickness-dependent crystallization behavior. We optimized nanoscale Sb films capped with a 4-nm SiO2 layer, which exhibit excellent amorphous thermal stability. The crystallization temperature ranges from 165 to 245 °C as the film thickness decreases from 5 to 3 nm. These optimized films were then assembled into a multilayer structure to achieve multi-level phase-change storage. A typical multilayer film consisting of three Sb layers was fabricated as phase-change random access memory (PCRAM), demonstrating four distinct resistance states with a large on/off ratio (∼102) and significant variation in operation voltage (∼0.5 V). This rapid, reversible, and low-energy multi-level storage was achieved using an electrical pulse as short as 20 ns at low voltages of 1.0, 2.1, 3.0, and 3.6 V for the first, second, and third SET operation, and RESET operation, respectively. The multi-level storage capability, enabled by segregation-free Sb with enhanced thermal stability through nano-confinement effects, offers a promising pathway toward high-density PCRAM suitable for large-scale neuromorphic computing.
With the growing need for extensive data storage, enhancing the storage density of nonvolatile memory technologies presents a significant challenge for commercial applications. This study explores the use of monatomic antimony (Sb) in multi-level phase-change storage, leveraging its thickness-dependent crystallization behavior. We optimized nanoscale Sb films capped with a 4-nm SiO2 layer, which exhibit excellent amorphous thermal stability. The crystallization temperature ranges from 165 to 245 °C as the film thickness decreases from 5 to 3 nm. These optimized films were then assembled into a multilayer structure to achieve multi-level phase-change storage. A typical multilayer film consisting of three Sb layers was fabricated as phase-change random access memory (PCRAM), demonstrating four distinct resistance states with a large on/off ratio (∼102) and significant variation in operation voltage (∼0.5 V). This rapid, reversible, and low-energy multi-level storage was achieved using an electrical pulse as short as 20 ns at low voltages of 1.0, 2.1, 3.0, and 3.6 V for the first, second, and third SET operation, and RESET operation, respectively. The multi-level storage capability, enabled by segregation-free Sb with enhanced thermal stability through nano-confinement effects, offers a promising pathway toward high-density PCRAM suitable for large-scale neuromorphic computing.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
customersupport@researchsolutions.com
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.